Rights statement: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Photonics, copyright © American Chemical Society after peer review and technical editing by the publisher.
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Final published version
Licence: CC BY
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Silicon-based single quantum dot emission in the telecoms C‑band
AU - Orchard, Jonathan
AU - Woodhead, Christopher
AU - Wu, Jiang
AU - Tang, Mingchu
AU - Beanland, R
AU - Noori, Yasir
AU - Liu, Huiyun
AU - Mowbray, David
AU - Young, Robert James
N1 - This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Photonics, copyright © American Chemical Society after peer review and technical editing by the publisher.
PY - 2017/7/19
Y1 - 2017/7/19
N2 - We report the observation of single quantum dot (QD) emission in the telecoms C-band (1530−1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the emission is achieved by capping InAs QDs with a thin GaAsSb layer. Sharp lines, representing emission from single QDs, are observed out to wavelengths as long as 1540 nm. Comparison is made to the optical properties of a nominally identical active region structure grown on a GaAs substrate. Single QD emission from a Si-based system at 1500 nm has the potential for single photon sources compatible with current optical fibers and reduced complexity of integration with drive electronics.
AB - We report the observation of single quantum dot (QD) emission in the telecoms C-band (1530−1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the emission is achieved by capping InAs QDs with a thin GaAsSb layer. Sharp lines, representing emission from single QDs, are observed out to wavelengths as long as 1540 nm. Comparison is made to the optical properties of a nominally identical active region structure grown on a GaAs substrate. Single QD emission from a Si-based system at 1500 nm has the potential for single photon sources compatible with current optical fibers and reduced complexity of integration with drive electronics.
U2 - 10.1021/acsphotonics.7b00276
DO - 10.1021/acsphotonics.7b00276
M3 - Journal article
VL - 4
SP - 1740
EP - 1746
JO - ACS Photonics
JF - ACS Photonics
SN - 2330-4022
IS - 7
ER -