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    Rights statement: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Photonics, copyright © American Chemical Society after peer review and technical editing by the publisher.

    Accepted author manuscript, 1.14 MB, PDF document

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  • acsphotonics.7b00276

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Silicon-based single quantum dot emission in the telecoms C‑band

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published

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Silicon-based single quantum dot emission in the telecoms C‑band. / Orchard, Jonathan; Woodhead, Christopher; Wu, Jiang et al.
In: ACS Photonics, Vol. 4, No. 7, 19.07.2017, p. 1740-1746.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Orchard, J, Woodhead, C, Wu, J, Tang, M, Beanland, R, Noori, Y, Liu, H, Mowbray, D & Young, RJ 2017, 'Silicon-based single quantum dot emission in the telecoms C‑band', ACS Photonics, vol. 4, no. 7, pp. 1740-1746. https://doi.org/10.1021/acsphotonics.7b00276

APA

Orchard, J., Woodhead, C., Wu, J., Tang, M., Beanland, R., Noori, Y., Liu, H., Mowbray, D., & Young, R. J. (2017). Silicon-based single quantum dot emission in the telecoms C‑band. ACS Photonics, 4(7), 1740-1746. https://doi.org/10.1021/acsphotonics.7b00276

Vancouver

Orchard J, Woodhead C, Wu J, Tang M, Beanland R, Noori Y et al. Silicon-based single quantum dot emission in the telecoms C‑band. ACS Photonics. 2017 Jul 19;4(7):1740-1746. Epub 2017 Jun 20. doi: 10.1021/acsphotonics.7b00276

Author

Orchard, Jonathan ; Woodhead, Christopher ; Wu, Jiang et al. / Silicon-based single quantum dot emission in the telecoms C‑band. In: ACS Photonics. 2017 ; Vol. 4, No. 7. pp. 1740-1746.

Bibtex

@article{35a17bb5bb274687a69206db0c6865b5,
title = "Silicon-based single quantum dot emission in the telecoms C‑band",
abstract = "We report the observation of single quantum dot (QD) emission in the telecoms C-band (1530−1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the emission is achieved by capping InAs QDs with a thin GaAsSb layer. Sharp lines, representing emission from single QDs, are observed out to wavelengths as long as 1540 nm. Comparison is made to the optical properties of a nominally identical active region structure grown on a GaAs substrate. Single QD emission from a Si-based system at 1500 nm has the potential for single photon sources compatible with current optical fibers and reduced complexity of integration with drive electronics.",
author = "Jonathan Orchard and Christopher Woodhead and Jiang Wu and Mingchu Tang and R Beanland and Yasir Noori and Huiyun Liu and David Mowbray and Young, {Robert James}",
note = "This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Photonics, copyright {\textcopyright} American Chemical Society after peer review and technical editing by the publisher.",
year = "2017",
month = jul,
day = "19",
doi = "10.1021/acsphotonics.7b00276",
language = "English",
volume = "4",
pages = "1740--1746",
journal = "ACS Photonics",
issn = "2330-4022",
publisher = "American Chemical Society",
number = "7",

}

RIS

TY - JOUR

T1 - Silicon-based single quantum dot emission in the telecoms C‑band

AU - Orchard, Jonathan

AU - Woodhead, Christopher

AU - Wu, Jiang

AU - Tang, Mingchu

AU - Beanland, R

AU - Noori, Yasir

AU - Liu, Huiyun

AU - Mowbray, David

AU - Young, Robert James

N1 - This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Photonics, copyright © American Chemical Society after peer review and technical editing by the publisher.

PY - 2017/7/19

Y1 - 2017/7/19

N2 - We report the observation of single quantum dot (QD) emission in the telecoms C-band (1530−1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the emission is achieved by capping InAs QDs with a thin GaAsSb layer. Sharp lines, representing emission from single QDs, are observed out to wavelengths as long as 1540 nm. Comparison is made to the optical properties of a nominally identical active region structure grown on a GaAs substrate. Single QD emission from a Si-based system at 1500 nm has the potential for single photon sources compatible with current optical fibers and reduced complexity of integration with drive electronics.

AB - We report the observation of single quantum dot (QD) emission in the telecoms C-band (1530−1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the emission is achieved by capping InAs QDs with a thin GaAsSb layer. Sharp lines, representing emission from single QDs, are observed out to wavelengths as long as 1540 nm. Comparison is made to the optical properties of a nominally identical active region structure grown on a GaAs substrate. Single QD emission from a Si-based system at 1500 nm has the potential for single photon sources compatible with current optical fibers and reduced complexity of integration with drive electronics.

U2 - 10.1021/acsphotonics.7b00276

DO - 10.1021/acsphotonics.7b00276

M3 - Journal article

VL - 4

SP - 1740

EP - 1746

JO - ACS Photonics

JF - ACS Photonics

SN - 2330-4022

IS - 7

ER -