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    Rights statement: Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 103, (6), 2013 and may be found at http://scitation.aip.org/content/aip/journal/apl/103/6/10.1063/1.4818126

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Simulation of the enhanced infrared photoresponse of type-II GaSb/GaAs quantum ring solar cells

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Simulation of the enhanced infrared photoresponse of type-II GaSb/GaAs quantum ring solar cells. / Wagener, Magnus C. ; Carrington, Peter James; Botha, Johannes Reinhardt ; Krier, Anthony.

In: Applied Physics Letters, Vol. 103, No. 6, 063902, 06.08.2013.

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Wagener, Magnus C. ; Carrington, Peter James ; Botha, Johannes Reinhardt ; Krier, Anthony. / Simulation of the enhanced infrared photoresponse of type-II GaSb/GaAs quantum ring solar cells. In: Applied Physics Letters. 2013 ; Vol. 103, No. 6.

Bibtex

@article{ac0eeb36de6745c39c53ac37ca71c313,
title = "Simulation of the enhanced infrared photoresponse of type-II GaSb/GaAs quantum ring solar cells",
abstract = "The extended photo-response of solar cells containing ten periods of GaSb/GaAs quantum rings imbedded in the p-i-n junction has been described using a single-band representation of the type-II quantum ring structure. By fitting the experimental data, the authors were able to deduce that the quantum rings are well represented by a Gaussian height distribution and a large valence band discontinuity. The simulated band of states is shown to be well matched to the photoluminescence analysis of the structure, with the inhomogeneous size distribution resulting in a band of hole states roughly 390 meV above the valence band.",
author = "Wagener, {Magnus C.} and Carrington, {Peter James} and Botha, {Johannes Reinhardt} and Anthony Krier",
note = "Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 103, (6), 2013 and may be found at http://scitation.aip.org/content/aip/journal/apl/103/6/10.1063/1.4818126",
year = "2013",
month = "8",
day = "6",
doi = "10.1063/1.4818126",
language = "English",
volume = "103",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "6",

}

RIS

TY - JOUR

T1 - Simulation of the enhanced infrared photoresponse of type-II GaSb/GaAs quantum ring solar cells

AU - Wagener, Magnus C.

AU - Carrington, Peter James

AU - Botha, Johannes Reinhardt

AU - Krier, Anthony

N1 - Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 103, (6), 2013 and may be found at http://scitation.aip.org/content/aip/journal/apl/103/6/10.1063/1.4818126

PY - 2013/8/6

Y1 - 2013/8/6

N2 - The extended photo-response of solar cells containing ten periods of GaSb/GaAs quantum rings imbedded in the p-i-n junction has been described using a single-band representation of the type-II quantum ring structure. By fitting the experimental data, the authors were able to deduce that the quantum rings are well represented by a Gaussian height distribution and a large valence band discontinuity. The simulated band of states is shown to be well matched to the photoluminescence analysis of the structure, with the inhomogeneous size distribution resulting in a band of hole states roughly 390 meV above the valence band.

AB - The extended photo-response of solar cells containing ten periods of GaSb/GaAs quantum rings imbedded in the p-i-n junction has been described using a single-band representation of the type-II quantum ring structure. By fitting the experimental data, the authors were able to deduce that the quantum rings are well represented by a Gaussian height distribution and a large valence band discontinuity. The simulated band of states is shown to be well matched to the photoluminescence analysis of the structure, with the inhomogeneous size distribution resulting in a band of hole states roughly 390 meV above the valence band.

U2 - 10.1063/1.4818126

DO - 10.1063/1.4818126

M3 - Journal article

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

M1 - 063902

ER -