Rights statement: Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 103, (6), 2013 and may be found at http://scitation.aip.org/content/aip/journal/apl/103/6/10.1063/1.4818126
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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Simulation of the enhanced infrared photoresponse of type-II GaSb/GaAs quantum ring solar cells
AU - Wagener, Magnus C.
AU - Carrington, Peter James
AU - Botha, Johannes Reinhardt
AU - Krier, Anthony
N1 - Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 103, (6), 2013 and may be found at http://scitation.aip.org/content/aip/journal/apl/103/6/10.1063/1.4818126
PY - 2013/8/6
Y1 - 2013/8/6
N2 - The extended photo-response of solar cells containing ten periods of GaSb/GaAs quantum rings imbedded in the p-i-n junction has been described using a single-band representation of the type-II quantum ring structure. By fitting the experimental data, the authors were able to deduce that the quantum rings are well represented by a Gaussian height distribution and a large valence band discontinuity. The simulated band of states is shown to be well matched to the photoluminescence analysis of the structure, with the inhomogeneous size distribution resulting in a band of hole states roughly 390 meV above the valence band.
AB - The extended photo-response of solar cells containing ten periods of GaSb/GaAs quantum rings imbedded in the p-i-n junction has been described using a single-band representation of the type-II quantum ring structure. By fitting the experimental data, the authors were able to deduce that the quantum rings are well represented by a Gaussian height distribution and a large valence band discontinuity. The simulated band of states is shown to be well matched to the photoluminescence analysis of the structure, with the inhomogeneous size distribution resulting in a band of hole states roughly 390 meV above the valence band.
U2 - 10.1063/1.4818126
DO - 10.1063/1.4818126
M3 - Journal article
VL - 103
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 6
M1 - 063902
ER -