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Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers

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Journal publication date1999
JournalJOURNAL OF ELECTRONIC MATERIALS
Journal number5
Volume28
Number of pages3
Pages503-505
Original languageEnglish

Abstract

Self-organized InGaAs/GaAs quantum dots (QDs) stacked multilayers have been prepared by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy shows that the InGaAs QDs are nearly perfectly vertically aligned in the growth direction [100]. The filtering effect on the QDs distribution is found to be the dominant mechanism leading to vertical alignment and a highly uniform size distribution. Moreover, we observe a distinct infrared absorption from the sample in the range of 8.6–10.7 µm. This indicates the potential of QDs multilayer structure for use as infrared photodetector.