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Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers

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Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers. / Zhuang, Qiandong; Li, J. M.; Zeng, Y. P. et al.
In: Journal of Electronic Materials, Vol. 28, No. 5, 1999, p. 503-505.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Zhuang, Q, Li, JM, Zeng, YP, Pan, L, Chen, YH, Kong, MY & Lin, LY 1999, 'Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers', Journal of Electronic Materials, vol. 28, no. 5, pp. 503-505. https://doi.org/10.1007/s11664-999-0102-2

APA

Zhuang, Q., Li, J. M., Zeng, Y. P., Pan, L., Chen, Y. H., Kong, M. Y., & Lin, L. Y. (1999). Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers. Journal of Electronic Materials, 28(5), 503-505. https://doi.org/10.1007/s11664-999-0102-2

Vancouver

Zhuang Q, Li JM, Zeng YP, Pan L, Chen YH, Kong MY et al. Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers. Journal of Electronic Materials. 1999;28(5):503-505. doi: 10.1007/s11664-999-0102-2

Author

Zhuang, Qiandong ; Li, J. M. ; Zeng, Y. P. et al. / Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers. In: Journal of Electronic Materials. 1999 ; Vol. 28, No. 5. pp. 503-505.

Bibtex

@article{f6e5ab98213a4ff2abd291da9558821d,
title = "Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers",
abstract = "Self-organized InGaAs/GaAs quantum dots (QDs) stacked multilayers have been prepared by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy shows that the InGaAs QDs are nearly perfectly vertically aligned in the growth direction [100]. The filtering effect on the QDs distribution is found to be the dominant mechanism leading to vertical alignment and a highly uniform size distribution. Moreover, we observe a distinct infrared absorption from the sample in the range of 8.6–10.7 µm. This indicates the potential of QDs multilayer structure for use as infrared photodetector. ",
keywords = " InGaAs/GaAs quantum dots , infrared absorption, self-organization ",
author = "Qiandong Zhuang and Li, {J. M.} and Zeng, {Y. P.} and L. Pan and Chen, {Y. H.} and M.Y. Kong and Lin, {L. Y.}",
year = "1999",
doi = "10.1007/s11664-999-0102-2",
language = "English",
volume = "28",
pages = "503--505",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "5",

}

RIS

TY - JOUR

T1 - Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers

AU - Zhuang, Qiandong

AU - Li, J. M.

AU - Zeng, Y. P.

AU - Pan, L.

AU - Chen, Y. H.

AU - Kong, M.Y.

AU - Lin, L. Y.

PY - 1999

Y1 - 1999

N2 - Self-organized InGaAs/GaAs quantum dots (QDs) stacked multilayers have been prepared by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy shows that the InGaAs QDs are nearly perfectly vertically aligned in the growth direction [100]. The filtering effect on the QDs distribution is found to be the dominant mechanism leading to vertical alignment and a highly uniform size distribution. Moreover, we observe a distinct infrared absorption from the sample in the range of 8.6–10.7 µm. This indicates the potential of QDs multilayer structure for use as infrared photodetector.

AB - Self-organized InGaAs/GaAs quantum dots (QDs) stacked multilayers have been prepared by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy shows that the InGaAs QDs are nearly perfectly vertically aligned in the growth direction [100]. The filtering effect on the QDs distribution is found to be the dominant mechanism leading to vertical alignment and a highly uniform size distribution. Moreover, we observe a distinct infrared absorption from the sample in the range of 8.6–10.7 µm. This indicates the potential of QDs multilayer structure for use as infrared photodetector.

KW - InGaAs/GaAs quantum dots

KW - infrared absorption

KW - self-organization

U2 - 10.1007/s11664-999-0102-2

DO - 10.1007/s11664-999-0102-2

M3 - Journal article

VL - 28

SP - 503

EP - 505

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 5

ER -