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Structural and optical properties of dilute InAsN grown by molecular beam epitaxy.

Research output: Contribution to journalJournal article


  • J. Ibanez
  • R. Oliva
  • M. de la Mare
  • M. Schmidbauer
  • S. Hernandez
  • P. Pellegrino
  • D. J. Scurr
  • R. Cusco
  • L. Artus
  • M. Shafi
  • R. H. Mari
  • M. Henini
  • Q. Zhuang
  • A. M. R. Godenir
  • A. Krier
  • Spanish Ministry of Education and Science Project No. MAT2007-63617 (Funder)
  • EPRSC (UK) (Funder)
<mark>Journal publication date</mark>11/2010
<mark>Journal</mark>Journal of Applied Physics
Issue number10
Pages (from-to)103504
<mark>Original language</mark>English


We perform a structural and optical characterization of InAs1-xNx epilayers grown by molecular beam epitaxy on InAs substrates (x less than or similar to 2.2%). High-resolution x-ray diffraction (HRXRD) is used to obtain information about the crystal quality and the strain state of the samples and to determine the N content of the films. The composition of two of the samples investigated is also obtained with time-of-flight secondary ion mass spectroscopy (ToF-SIMS) measurements. The combined analysis of the HRXRD and ToF-SIMS data suggests that the lattice parameter of InAsN might significantly deviate from Vegard's law. Raman scattering and far-infrared reflectivity measurements have been carried out to investigate the incorporation of N into the InAsN alloy. N-related local vibrational modes are detected in the samples with higher N content. The origin of the observed features is discussed. We study the compositional dependence of the room-temperature band gap energy of the InAsN alloy. For this purpose, photoluminescence and optical absorption measurements are presented. The results are analyzed in terms of the band-anticrossing (BAC) model. We find that the room-temperature coupling parameter for InAsN within the BAC model is C-NM=2.0 +/- 0.1 eV. (C) 2010 American Institute of Physics.