Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Structural and optical properties of dilute InAsN grown by molecular beam epitaxy.
AU - Ibanez, J.
AU - Oliva, R.
AU - de la Mare, M.
AU - Schmidbauer, M.
AU - Hernandez, S.
AU - Pellegrino, P.
AU - Scurr, D. J.
AU - Cusco, R.
AU - Artus, L.
AU - Shafi, M.
AU - Mari, R. H.
AU - Henini, M.
AU - Zhuang, Q.
AU - Godenir, A. M. R.
AU - Krier, A.
AU - Spanish Ministry of Education and Science Project No. MAT2007-63617 (Funder)
AU - EPRSC (UK) (Funder)
PY - 2010/11
Y1 - 2010/11
N2 - We perform a structural and optical characterization of InAs1-xNx epilayers grown by molecular beam epitaxy on InAs substrates (x less than or similar to 2.2%). High-resolution x-ray diffraction (HRXRD) is used to obtain information about the crystal quality and the strain state of the samples and to determine the N content of the films. The composition of two of the samples investigated is also obtained with time-of-flight secondary ion mass spectroscopy (ToF-SIMS) measurements. The combined analysis of the HRXRD and ToF-SIMS data suggests that the lattice parameter of InAsN might significantly deviate from Vegard's law. Raman scattering and far-infrared reflectivity measurements have been carried out to investigate the incorporation of N into the InAsN alloy. N-related local vibrational modes are detected in the samples with higher N content. The origin of the observed features is discussed. We study the compositional dependence of the room-temperature band gap energy of the InAsN alloy. For this purpose, photoluminescence and optical absorption measurements are presented. The results are analyzed in terms of the band-anticrossing (BAC) model. We find that the room-temperature coupling parameter for InAsN within the BAC model is C-NM=2.0 +/- 0.1 eV. (C) 2010 American Institute of Physics.
AB - We perform a structural and optical characterization of InAs1-xNx epilayers grown by molecular beam epitaxy on InAs substrates (x less than or similar to 2.2%). High-resolution x-ray diffraction (HRXRD) is used to obtain information about the crystal quality and the strain state of the samples and to determine the N content of the films. The composition of two of the samples investigated is also obtained with time-of-flight secondary ion mass spectroscopy (ToF-SIMS) measurements. The combined analysis of the HRXRD and ToF-SIMS data suggests that the lattice parameter of InAsN might significantly deviate from Vegard's law. Raman scattering and far-infrared reflectivity measurements have been carried out to investigate the incorporation of N into the InAsN alloy. N-related local vibrational modes are detected in the samples with higher N content. The origin of the observed features is discussed. We study the compositional dependence of the room-temperature band gap energy of the InAsN alloy. For this purpose, photoluminescence and optical absorption measurements are presented. The results are analyzed in terms of the band-anticrossing (BAC) model. We find that the room-temperature coupling parameter for InAsN within the BAC model is C-NM=2.0 +/- 0.1 eV. (C) 2010 American Institute of Physics.
U2 - 10.1063/1.3509149
DO - 10.1063/1.3509149
M3 - Journal article
VL - 108
SP - 103504
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 1089-7550
IS - 10
ER -