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    Rights statement: This is the author’s version of a work that was accepted for publication in Solar Energy Materials and Solar Cells. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Solar Energy Materials and Solar Cells, 163, 2017 DOI: 10.1016/j.solmat.2017.01.019

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Suppression of the surface “dead region” for fabrication of GaInAsSb thermophotovoltaic cells

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Suppression of the surface “dead region” for fabrication of GaInAsSb thermophotovoltaic cells. / Tang, Liangliang; Xu, Chang; Liu, Zhuming; Lu, Qi; Marshall, Andrew; Krier, Anthony.

In: Solar Energy Materials and Solar Cells, Vol. 163, 04.2017, p. 263-269.

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Tang, Liangliang ; Xu, Chang ; Liu, Zhuming ; Lu, Qi ; Marshall, Andrew ; Krier, Anthony. / Suppression of the surface “dead region” for fabrication of GaInAsSb thermophotovoltaic cells. In: Solar Energy Materials and Solar Cells. 2017 ; Vol. 163. pp. 263-269.

Bibtex

@article{ca7ea860a74c4576bddb24775151dd50,
title = "Suppression of the surface “dead region” for fabrication of GaInAsSb thermophotovoltaic cells",
abstract = "Abstract Zn diffusion processes in n-Ga0.78In0.22As0.2Sb0.8 epitaxial films are studied using different diffusion sources, a series of the Zn profiles with single and double humps are obtained. The group V-atoms (As and Sb) are found to have little effect on suppressing the surface “dead region”. The Ga and In atoms have entirely different effect on diffusion although they are both group III-atoms. The “dead region” is suppressed completely under Ga-rich conditions, while the suppression will not occur under In-rich conditions. The GaInAsSb cells are fabricated under pure Zn and Ga-rich conditions. An electrical heating thermophotovoltaic system is fabricated for cell testing. Under the radiation from 1055 °C-SiN ceramics emitter, the output power density of the GaInAsSb cell obtained under Ga-rich condition is much larger than that of the cell obtained under pure Zn condition, which demonstrated that the GaInAsSb cells can be fabricated without precise etching under Ga-rich conditions.",
keywords = "Zn diffusion, GaInAsSb, Thermophotovoltaic cells",
author = "Liangliang Tang and Chang Xu and Zhuming Liu and Qi Lu and Andrew Marshall and Anthony Krier",
note = "This is the author’s version of a work that was accepted for publication in Solar Energy Materials and Solar Cells. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Solar Energy Materials and Solar Cells, 163, 2017 DOI: 10.1016/j.solmat.2017.01.019",
year = "2017",
month = "4",
doi = "10.1016/j.solmat.2017.01.019",
language = "English",
volume = "163",
pages = "263--269",
journal = "Solar Energy Materials and Solar Cells",
issn = "0927-0248",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Suppression of the surface “dead region” for fabrication of GaInAsSb thermophotovoltaic cells

AU - Tang, Liangliang

AU - Xu, Chang

AU - Liu, Zhuming

AU - Lu, Qi

AU - Marshall, Andrew

AU - Krier, Anthony

N1 - This is the author’s version of a work that was accepted for publication in Solar Energy Materials and Solar Cells. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Solar Energy Materials and Solar Cells, 163, 2017 DOI: 10.1016/j.solmat.2017.01.019

PY - 2017/4

Y1 - 2017/4

N2 - Abstract Zn diffusion processes in n-Ga0.78In0.22As0.2Sb0.8 epitaxial films are studied using different diffusion sources, a series of the Zn profiles with single and double humps are obtained. The group V-atoms (As and Sb) are found to have little effect on suppressing the surface “dead region”. The Ga and In atoms have entirely different effect on diffusion although they are both group III-atoms. The “dead region” is suppressed completely under Ga-rich conditions, while the suppression will not occur under In-rich conditions. The GaInAsSb cells are fabricated under pure Zn and Ga-rich conditions. An electrical heating thermophotovoltaic system is fabricated for cell testing. Under the radiation from 1055 °C-SiN ceramics emitter, the output power density of the GaInAsSb cell obtained under Ga-rich condition is much larger than that of the cell obtained under pure Zn condition, which demonstrated that the GaInAsSb cells can be fabricated without precise etching under Ga-rich conditions.

AB - Abstract Zn diffusion processes in n-Ga0.78In0.22As0.2Sb0.8 epitaxial films are studied using different diffusion sources, a series of the Zn profiles with single and double humps are obtained. The group V-atoms (As and Sb) are found to have little effect on suppressing the surface “dead region”. The Ga and In atoms have entirely different effect on diffusion although they are both group III-atoms. The “dead region” is suppressed completely under Ga-rich conditions, while the suppression will not occur under In-rich conditions. The GaInAsSb cells are fabricated under pure Zn and Ga-rich conditions. An electrical heating thermophotovoltaic system is fabricated for cell testing. Under the radiation from 1055 °C-SiN ceramics emitter, the output power density of the GaInAsSb cell obtained under Ga-rich condition is much larger than that of the cell obtained under pure Zn condition, which demonstrated that the GaInAsSb cells can be fabricated without precise etching under Ga-rich conditions.

KW - Zn diffusion

KW - GaInAsSb

KW - Thermophotovoltaic cells

U2 - 10.1016/j.solmat.2017.01.019

DO - 10.1016/j.solmat.2017.01.019

M3 - Journal article

VL - 163

SP - 263

EP - 269

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

ER -