Rights statement: This is the author’s version of a work that was accepted for publication in Solar Energy Materials and Solar Cells. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Solar Energy Materials and Solar Cells, 163, 2017 DOI: 10.1016/j.solmat.2017.01.019
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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Suppression of the surface “dead region” for fabrication of GaInAsSb thermophotovoltaic cells
AU - Tang, Liangliang
AU - Xu, Chang
AU - Liu, Zhuming
AU - Lu, Qi
AU - Marshall, Andrew
AU - Krier, Anthony
N1 - This is the author’s version of a work that was accepted for publication in Solar Energy Materials and Solar Cells. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Solar Energy Materials and Solar Cells, 163, 2017 DOI: 10.1016/j.solmat.2017.01.019
PY - 2017/4
Y1 - 2017/4
N2 - Abstract Zn diffusion processes in n-Ga0.78In0.22As0.2Sb0.8 epitaxial films are studied using different diffusion sources, a series of the Zn profiles with single and double humps are obtained. The group V-atoms (As and Sb) are found to have little effect on suppressing the surface “dead region”. The Ga and In atoms have entirely different effect on diffusion although they are both group III-atoms. The “dead region” is suppressed completely under Ga-rich conditions, while the suppression will not occur under In-rich conditions. The GaInAsSb cells are fabricated under pure Zn and Ga-rich conditions. An electrical heating thermophotovoltaic system is fabricated for cell testing. Under the radiation from 1055 °C-SiN ceramics emitter, the output power density of the GaInAsSb cell obtained under Ga-rich condition is much larger than that of the cell obtained under pure Zn condition, which demonstrated that the GaInAsSb cells can be fabricated without precise etching under Ga-rich conditions.
AB - Abstract Zn diffusion processes in n-Ga0.78In0.22As0.2Sb0.8 epitaxial films are studied using different diffusion sources, a series of the Zn profiles with single and double humps are obtained. The group V-atoms (As and Sb) are found to have little effect on suppressing the surface “dead region”. The Ga and In atoms have entirely different effect on diffusion although they are both group III-atoms. The “dead region” is suppressed completely under Ga-rich conditions, while the suppression will not occur under In-rich conditions. The GaInAsSb cells are fabricated under pure Zn and Ga-rich conditions. An electrical heating thermophotovoltaic system is fabricated for cell testing. Under the radiation from 1055 °C-SiN ceramics emitter, the output power density of the GaInAsSb cell obtained under Ga-rich condition is much larger than that of the cell obtained under pure Zn condition, which demonstrated that the GaInAsSb cells can be fabricated without precise etching under Ga-rich conditions.
KW - Zn diffusion
KW - GaInAsSb
KW - Thermophotovoltaic cells
U2 - 10.1016/j.solmat.2017.01.019
DO - 10.1016/j.solmat.2017.01.019
M3 - Journal article
VL - 163
SP - 263
EP - 269
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
ER -