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Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots in pulsed magnetic fields.

Research output: Contribution to journalJournal article

Published
  • Thomas Nuytten
  • Manus Hayne
  • Mohamed Henini
  • Victor V. Moshchalkov
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<mark>Journal publication date</mark>25/03/2008
<mark>Journal</mark>Physical Review B
Volume77
Pages (from-to)115348
<mark>State</mark>Published
<mark>Original language</mark>English

Abstract

We have studied the magnetic field (< 50 T) dependence of the photoluminescence (PL) of self-assembled InAs/GaAs quantum dots as a function of temperature (T). As the temperature is raised from 4.2 up to 80 K thermal redistribution causes the PL to be increasingly dominated by dots with a lower PL energy. Magneto-PL demonstrates that these low energy dots are larger in size only in the growth direction, and not in the plane of the sample. At high temperatures (T > 100 K) a different physical phenomenon emerges: we see an anomalous decrease of the PL shift in magnetic field, which is attributed to field-enhancement of the quantum dot barrier potential. This mechanism strongly favors excitons in small dots with a weak PL shift in magnetic field, hence laterally smaller dots increasingly dominate the PL at high temperatures and high fields.

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© 2008 American Physical Society