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Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots in pulsed magnetic fields.

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Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots in pulsed magnetic fields. / Nuytten, Thomas; Hayne, Manus; Henini, Mohamed et al.
In: Physical review B, Vol. 77, 25.03.2008, p. 115348.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Nuytten, T, Hayne, M, Henini, M & Moshchalkov, VV 2008, 'Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots in pulsed magnetic fields.', Physical review B, vol. 77, pp. 115348. https://doi.org/10.1103/PhysRevB.77.115348

APA

Nuytten, T., Hayne, M., Henini, M., & Moshchalkov, V. V. (2008). Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots in pulsed magnetic fields. Physical review B, 77, 115348. https://doi.org/10.1103/PhysRevB.77.115348

Vancouver

Nuytten T, Hayne M, Henini M, Moshchalkov VV. Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots in pulsed magnetic fields. Physical review B. 2008 Mar 25;77:115348. doi: 10.1103/PhysRevB.77.115348

Author

Nuytten, Thomas ; Hayne, Manus ; Henini, Mohamed et al. / Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots in pulsed magnetic fields. In: Physical review B. 2008 ; Vol. 77. pp. 115348.

Bibtex

@article{7b487c7fd4c1476b868d112aa038a644,
title = "Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots in pulsed magnetic fields.",
abstract = "We have studied the magnetic field (< 50 T) dependence of the photoluminescence (PL) of self-assembled InAs/GaAs quantum dots as a function of temperature (T). As the temperature is raised from 4.2 up to 80 K thermal redistribution causes the PL to be increasingly dominated by dots with a lower PL energy. Magneto-PL demonstrates that these low energy dots are larger in size only in the growth direction, and not in the plane of the sample. At high temperatures (T > 100 K) a different physical phenomenon emerges: we see an anomalous decrease of the PL shift in magnetic field, which is attributed to field-enhancement of the quantum dot barrier potential. This mechanism strongly favors excitons in small dots with a weak PL shift in magnetic field, hence laterally smaller dots increasingly dominate the PL at high temperatures and high fields.",
keywords = "self-assembled quantum dots, high magnetic fields, temperature dependence, excitons",
author = "Thomas Nuytten and Manus Hayne and Mohamed Henini and Moshchalkov, {Victor V.}",
note = "{\textcopyright} 2008 American Physical Society",
year = "2008",
month = mar,
day = "25",
doi = "10.1103/PhysRevB.77.115348",
language = "English",
volume = "77",
pages = "115348",
journal = "Physical review B",
issn = "1550-235X",
publisher = "AMER PHYSICAL SOC",

}

RIS

TY - JOUR

T1 - Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots in pulsed magnetic fields.

AU - Nuytten, Thomas

AU - Hayne, Manus

AU - Henini, Mohamed

AU - Moshchalkov, Victor V.

N1 - © 2008 American Physical Society

PY - 2008/3/25

Y1 - 2008/3/25

N2 - We have studied the magnetic field (< 50 T) dependence of the photoluminescence (PL) of self-assembled InAs/GaAs quantum dots as a function of temperature (T). As the temperature is raised from 4.2 up to 80 K thermal redistribution causes the PL to be increasingly dominated by dots with a lower PL energy. Magneto-PL demonstrates that these low energy dots are larger in size only in the growth direction, and not in the plane of the sample. At high temperatures (T > 100 K) a different physical phenomenon emerges: we see an anomalous decrease of the PL shift in magnetic field, which is attributed to field-enhancement of the quantum dot barrier potential. This mechanism strongly favors excitons in small dots with a weak PL shift in magnetic field, hence laterally smaller dots increasingly dominate the PL at high temperatures and high fields.

AB - We have studied the magnetic field (< 50 T) dependence of the photoluminescence (PL) of self-assembled InAs/GaAs quantum dots as a function of temperature (T). As the temperature is raised from 4.2 up to 80 K thermal redistribution causes the PL to be increasingly dominated by dots with a lower PL energy. Magneto-PL demonstrates that these low energy dots are larger in size only in the growth direction, and not in the plane of the sample. At high temperatures (T > 100 K) a different physical phenomenon emerges: we see an anomalous decrease of the PL shift in magnetic field, which is attributed to field-enhancement of the quantum dot barrier potential. This mechanism strongly favors excitons in small dots with a weak PL shift in magnetic field, hence laterally smaller dots increasingly dominate the PL at high temperatures and high fields.

KW - self-assembled quantum dots

KW - high magnetic fields

KW - temperature dependence

KW - excitons

U2 - 10.1103/PhysRevB.77.115348

DO - 10.1103/PhysRevB.77.115348

M3 - Journal article

VL - 77

SP - 115348

JO - Physical review B

JF - Physical review B

SN - 1550-235X

ER -