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The influence of melt purification and structure defects on mid-infrared light emitting diodes. .

Research output: Contribution to journalJournal article

<mark>Journal publication date</mark>7/07/2003
<mark>Journal</mark>Journal of Physics D: Applied Physics
Issue number13
Number of pages5
Pages (from-to)1484-1488
<mark>Original language</mark>English


Mid-infrared light emitting diodes which exhibit more than 7 mW (pulsed) and 0.35 mW dc output power at 3.3 mum and at room temperature have been fabricated by liquid phase epitaxy using Pb as a neutral solvent. Using Pb solution an increase in pulsed output power of between two and three times was obtained compared with InAs light emitting diodes (LEDs) made using rare-earth gettering. The performance improvements were attributed to a reduction in residual carrier concentration arising from the removal of un-intentional donors and structure defects in the InAs active region material. These LEDs are well matched to the CH4 absorption spectrum and potentially could form the basis of a practical infrared CH4 gas sensor.