Home > Research > Publications & Outputs > The influence of melt purification and structur...
View graph of relations

The influence of melt purification and structure defects on mid-infrared light emitting diodes. .

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Published

Standard

The influence of melt purification and structure defects on mid-infrared light emitting diodes. . / Krier, A.; Sherstnev, V. V.
In: Journal of Physics D: Applied Physics, Vol. 36, No. 13, 07.07.2003, p. 1484-1488.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

APA

Vancouver

Krier A, Sherstnev VV. The influence of melt purification and structure defects on mid-infrared light emitting diodes. . Journal of Physics D: Applied Physics. 2003 Jul 7;36(13):1484-1488. doi: 10.1088/0022-3727/36/13/309

Author

Krier, A. ; Sherstnev, V. V. / The influence of melt purification and structure defects on mid-infrared light emitting diodes. . In: Journal of Physics D: Applied Physics. 2003 ; Vol. 36, No. 13. pp. 1484-1488.

Bibtex

@article{f6c33c4a68c049239d2f01399baeaf66,
title = "The influence of melt purification and structure defects on mid-infrared light emitting diodes. .",
abstract = "Mid-infrared light emitting diodes which exhibit more than 7 mW (pulsed) and 0.35 mW dc output power at 3.3 mum and at room temperature have been fabricated by liquid phase epitaxy using Pb as a neutral solvent. Using Pb solution an increase in pulsed output power of between two and three times was obtained compared with InAs light emitting diodes (LEDs) made using rare-earth gettering. The performance improvements were attributed to a reduction in residual carrier concentration arising from the removal of un-intentional donors and structure defects in the InAs active region material. These LEDs are well matched to the CH4 absorption spectrum and potentially could form the basis of a practical infrared CH4 gas sensor.",
author = "A. Krier and Sherstnev, {V. V.}",
year = "2003",
month = jul,
day = "7",
doi = "10.1088/0022-3727/36/13/309",
language = "English",
volume = "36",
pages = "1484--1488",
journal = "Journal of Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd",
number = "13",

}

RIS

TY - JOUR

T1 - The influence of melt purification and structure defects on mid-infrared light emitting diodes. .

AU - Krier, A.

AU - Sherstnev, V. V.

PY - 2003/7/7

Y1 - 2003/7/7

N2 - Mid-infrared light emitting diodes which exhibit more than 7 mW (pulsed) and 0.35 mW dc output power at 3.3 mum and at room temperature have been fabricated by liquid phase epitaxy using Pb as a neutral solvent. Using Pb solution an increase in pulsed output power of between two and three times was obtained compared with InAs light emitting diodes (LEDs) made using rare-earth gettering. The performance improvements were attributed to a reduction in residual carrier concentration arising from the removal of un-intentional donors and structure defects in the InAs active region material. These LEDs are well matched to the CH4 absorption spectrum and potentially could form the basis of a practical infrared CH4 gas sensor.

AB - Mid-infrared light emitting diodes which exhibit more than 7 mW (pulsed) and 0.35 mW dc output power at 3.3 mum and at room temperature have been fabricated by liquid phase epitaxy using Pb as a neutral solvent. Using Pb solution an increase in pulsed output power of between two and three times was obtained compared with InAs light emitting diodes (LEDs) made using rare-earth gettering. The performance improvements were attributed to a reduction in residual carrier concentration arising from the removal of un-intentional donors and structure defects in the InAs active region material. These LEDs are well matched to the CH4 absorption spectrum and potentially could form the basis of a practical infrared CH4 gas sensor.

U2 - 10.1088/0022-3727/36/13/309

DO - 10.1088/0022-3727/36/13/309

M3 - Journal article

VL - 36

SP - 1484

EP - 1488

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 13

ER -