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Tunable Spin Loading and T-1 of a Silicon Spin Qubit Measured by Single-Shot Readout

Research output: Contribution to journalJournal article


  • C. B. Simmons
  • J. R. Prance
  • B. J. Van Bael
  • Teck Seng Koh
  • Zhan Shi
  • D. E. Savage
  • M. G. Lagally
  • R. Joynt
  • Mark Friesen
  • S. N. Coppersmith
  • M. A. Eriksson
Article number156804
Journal publication date11/04/2011
JournalPhysical review letters
Number of pages4
Original languageEnglish


We demonstrate single-shot readout of a silicon quantum dot spin qubit, and we measure the spin relaxation time T-1. We show that the rate of spin loading can be tuned by an order of magnitude by changing the amplitude of a pulsed-gate voltage, and the fraction of spin-up electrons loaded can also be controlled. This tunability arises because electron spins can be loaded through an orbital excited state. Using a theory that includes excited states of the dot and energy-dependent tunneling, we find that a global fit to the loading rate and spin-up fraction is in good agreement with the data.