Research output: Contribution to Journal/Magazine › Journal article › peer-review
Article number | 156804 |
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<mark>Journal publication date</mark> | 11/04/2011 |
<mark>Journal</mark> | Physical review letters |
Issue number | 15 |
Volume | 106 |
Number of pages | 4 |
Pages (from-to) | - |
Publication Status | Published |
<mark>Original language</mark> | English |
We demonstrate single-shot readout of a silicon quantum dot spin qubit, and we measure the spin relaxation time T-1. We show that the rate of spin loading can be tuned by an order of magnitude by changing the amplitude of a pulsed-gate voltage, and the fraction of spin-up electrons loaded can also be controlled. This tunability arises because electron spins can be loaded through an orbital excited state. Using a theory that includes excited states of the dot and energy-dependent tunneling, we find that a global fit to the loading rate and spin-up fraction is in good agreement with the data.