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  • SPIE paper 9937-6

    Rights statement: P. J. Carrington; D. Montesdeoca; H. Fujita; J. James; M. C. Wagener; J. R. Botha; A. R. J. Marshall; A. Krier Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells Proc. SPIE 9937, Next Generation Technologies for Solar Energy Conversion VII, 993708 (23 September 2016); doi: 10.1117/12.2236957 Copyright 2016 Society of Photo Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

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Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells

Research output: Contribution to journalJournal article

Published
Article number993708
<mark>Journal publication date</mark>23/09/2016
<mark>Journal</mark>Proceedings of SPIE
Volume9937
Number of pages7
Publication statusPublished
Original languageEnglish

Abstract

The introduction of GaSb quantum dots (QDs) within a GaAs single junction solar cell is attracting increasing interest as a means of absorbing long wavelength photons to extend the photoresponse and increase the short-circuit current. The band alignment in this system is type-II, such that holes are localized within the GaSb QDs but there is no electron confinement. Compared to InAs QDs this produces a red-shift of the photoresponse which could increase the short-circuit
current and improve carrier extraction. GaSb nanostructures grown by molecular beam epitaxy (MBE) tend to preferentially form quantum rings (QRs) which are less strained and contain fewer defects than the GaSb QDs, which means that they are more suitable for dense stacking in the active region of a solar cell to reduce the accumulation of internal strain and enhance light absorption. Here, we report the growth and fabrication of GaAs based p-i-n solar cells
containing ten layers of GaSb QRs. They show extended long wavelength photoresponse into the near-IR up to 1400 nm and enhanced short-circuit current compared to the GaAs control cell due to absorption of low energy photons. Although enhancement of the short-circuit current was observed, the thermionic emission of holes was found to be insufficient for ideal operation at room temperature.

Bibliographic note

P. J. Carrington; D. Montesdeoca; H. Fujita; J. James; M. C. Wagener; J. R. Botha; A. R. J. Marshall; A. Krier Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells Proc. SPIE 9937, Next Generation Technologies for Solar Energy Conversion VII, 993708 (23 September 2016); doi: 10.1117/12.2236957 Copyright 2016 Society of Photo Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.