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  • SPIE paper 9937-6

    Rights statement: P. J. Carrington; D. Montesdeoca; H. Fujita; J. James; M. C. Wagener; J. R. Botha; A. R. J. Marshall; A. Krier Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells Proc. SPIE 9937, Next Generation Technologies for Solar Energy Conversion VII, 993708 (23 September 2016); doi: 10.1117/12.2236957 Copyright 2016 Society of Photo Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

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Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells

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Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells. / Carrington, Peter James; Montesdeoca Cardenes, Denise; Fujita, Hiromi; James Asirvatham, Juanita Saroj; Wagener, Magnus; Botha, Johannes Reinhardt ; Marshall, Andrew Robert Julian; Krier, Anthony.

In: Proceedings of SPIE, Vol. 9937, 993708, 23.09.2016.

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@article{4385ed5e829a4c8eb9b6a69299143942,
title = "Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells",
abstract = "The introduction of GaSb quantum dots (QDs) within a GaAs single junction solar cell is attracting increasing interest as a means of absorbing long wavelength photons to extend the photoresponse and increase the short-circuit current. The band alignment in this system is type-II, such that holes are localized within the GaSb QDs but there is no electron confinement. Compared to InAs QDs this produces a red-shift of the photoresponse which could increase the short-circuitcurrent and improve carrier extraction. GaSb nanostructures grown by molecular beam epitaxy (MBE) tend to preferentially form quantum rings (QRs) which are less strained and contain fewer defects than the GaSb QDs, which means that they are more suitable for dense stacking in the active region of a solar cell to reduce the accumulation of internal strain and enhance light absorption. Here, we report the growth and fabrication of GaAs based p-i-n solar cellscontaining ten layers of GaSb QRs. They show extended long wavelength photoresponse into the near-IR up to 1400 nm and enhanced short-circuit current compared to the GaAs control cell due to absorption of low energy photons. Although enhancement of the short-circuit current was observed, the thermionic emission of holes was found to be insufficient for ideal operation at room temperature.",
keywords = "Solar Cells, GaSb, Molecular beam epitaxy, Photoluminescence",
author = "Carrington, {Peter James} and {Montesdeoca Cardenes}, Denise and Hiromi Fujita and {James Asirvatham}, {Juanita Saroj} and Magnus Wagener and Botha, {Johannes Reinhardt} and Marshall, {Andrew Robert Julian} and Anthony Krier",
note = "P. J. Carrington; D. Montesdeoca; H. Fujita; J. James; M. C. Wagener; J. R. Botha; A. R. J. Marshall; A. Krier Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells Proc. SPIE 9937, Next Generation Technologies for Solar Energy Conversion VII, 993708 (23 September 2016); doi: 10.1117/12.2236957 Copyright 2016 Society of Photo Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.",
year = "2016",
month = "9",
day = "23",
language = "English",
volume = "9937",
journal = "Proceedings of SPIE",
issn = "0277-786X",
publisher = "SPIE",

}

RIS

TY - JOUR

T1 - Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells

AU - Carrington, Peter James

AU - Montesdeoca Cardenes, Denise

AU - Fujita, Hiromi

AU - James Asirvatham, Juanita Saroj

AU - Wagener, Magnus

AU - Botha, Johannes Reinhardt

AU - Marshall, Andrew Robert Julian

AU - Krier, Anthony

N1 - P. J. Carrington; D. Montesdeoca; H. Fujita; J. James; M. C. Wagener; J. R. Botha; A. R. J. Marshall; A. Krier Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells Proc. SPIE 9937, Next Generation Technologies for Solar Energy Conversion VII, 993708 (23 September 2016); doi: 10.1117/12.2236957 Copyright 2016 Society of Photo Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

PY - 2016/9/23

Y1 - 2016/9/23

N2 - The introduction of GaSb quantum dots (QDs) within a GaAs single junction solar cell is attracting increasing interest as a means of absorbing long wavelength photons to extend the photoresponse and increase the short-circuit current. The band alignment in this system is type-II, such that holes are localized within the GaSb QDs but there is no electron confinement. Compared to InAs QDs this produces a red-shift of the photoresponse which could increase the short-circuitcurrent and improve carrier extraction. GaSb nanostructures grown by molecular beam epitaxy (MBE) tend to preferentially form quantum rings (QRs) which are less strained and contain fewer defects than the GaSb QDs, which means that they are more suitable for dense stacking in the active region of a solar cell to reduce the accumulation of internal strain and enhance light absorption. Here, we report the growth and fabrication of GaAs based p-i-n solar cellscontaining ten layers of GaSb QRs. They show extended long wavelength photoresponse into the near-IR up to 1400 nm and enhanced short-circuit current compared to the GaAs control cell due to absorption of low energy photons. Although enhancement of the short-circuit current was observed, the thermionic emission of holes was found to be insufficient for ideal operation at room temperature.

AB - The introduction of GaSb quantum dots (QDs) within a GaAs single junction solar cell is attracting increasing interest as a means of absorbing long wavelength photons to extend the photoresponse and increase the short-circuit current. The band alignment in this system is type-II, such that holes are localized within the GaSb QDs but there is no electron confinement. Compared to InAs QDs this produces a red-shift of the photoresponse which could increase the short-circuitcurrent and improve carrier extraction. GaSb nanostructures grown by molecular beam epitaxy (MBE) tend to preferentially form quantum rings (QRs) which are less strained and contain fewer defects than the GaSb QDs, which means that they are more suitable for dense stacking in the active region of a solar cell to reduce the accumulation of internal strain and enhance light absorption. Here, we report the growth and fabrication of GaAs based p-i-n solar cellscontaining ten layers of GaSb QRs. They show extended long wavelength photoresponse into the near-IR up to 1400 nm and enhanced short-circuit current compared to the GaAs control cell due to absorption of low energy photons. Although enhancement of the short-circuit current was observed, the thermionic emission of holes was found to be insufficient for ideal operation at room temperature.

KW - Solar Cells

KW - GaSb

KW - Molecular beam epitaxy

KW - Photoluminescence

M3 - Journal article

VL - 9937

JO - Proceedings of SPIE

JF - Proceedings of SPIE

SN - 0277-786X

M1 - 993708

ER -