Rights statement: P. J. Carrington; D. Montesdeoca; H. Fujita; J. James; M. C. Wagener; J. R. Botha; A. R. J. Marshall; A. Krier Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells Proc. SPIE 9937, Next Generation Technologies for Solar Energy Conversion VII, 993708 (23 September 2016); doi: 10.1117/12.2236957 Copyright 2016 Society of Photo Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells
AU - Carrington, Peter James
AU - Montesdeoca Cardenes, Denise
AU - Fujita, Hiromi
AU - James Asirvatham, Juanita Saroj
AU - Wagener, Magnus
AU - Botha, Johannes Reinhardt
AU - Marshall, Andrew Robert Julian
AU - Krier, Anthony
N1 - P. J. Carrington; D. Montesdeoca; H. Fujita; J. James; M. C. Wagener; J. R. Botha; A. R. J. Marshall; A. Krier Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells Proc. SPIE 9937, Next Generation Technologies for Solar Energy Conversion VII, 993708 (23 September 2016); doi: 10.1117/12.2236957 Copyright 2016 Society of Photo Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
PY - 2016/9/23
Y1 - 2016/9/23
N2 - The introduction of GaSb quantum dots (QDs) within a GaAs single junction solar cell is attracting increasing interest as a means of absorbing long wavelength photons to extend the photoresponse and increase the short-circuit current. The band alignment in this system is type-II, such that holes are localized within the GaSb QDs but there is no electron confinement. Compared to InAs QDs this produces a red-shift of the photoresponse which could increase the short-circuitcurrent and improve carrier extraction. GaSb nanostructures grown by molecular beam epitaxy (MBE) tend to preferentially form quantum rings (QRs) which are less strained and contain fewer defects than the GaSb QDs, which means that they are more suitable for dense stacking in the active region of a solar cell to reduce the accumulation of internal strain and enhance light absorption. Here, we report the growth and fabrication of GaAs based p-i-n solar cellscontaining ten layers of GaSb QRs. They show extended long wavelength photoresponse into the near-IR up to 1400 nm and enhanced short-circuit current compared to the GaAs control cell due to absorption of low energy photons. Although enhancement of the short-circuit current was observed, the thermionic emission of holes was found to be insufficient for ideal operation at room temperature.
AB - The introduction of GaSb quantum dots (QDs) within a GaAs single junction solar cell is attracting increasing interest as a means of absorbing long wavelength photons to extend the photoresponse and increase the short-circuit current. The band alignment in this system is type-II, such that holes are localized within the GaSb QDs but there is no electron confinement. Compared to InAs QDs this produces a red-shift of the photoresponse which could increase the short-circuitcurrent and improve carrier extraction. GaSb nanostructures grown by molecular beam epitaxy (MBE) tend to preferentially form quantum rings (QRs) which are less strained and contain fewer defects than the GaSb QDs, which means that they are more suitable for dense stacking in the active region of a solar cell to reduce the accumulation of internal strain and enhance light absorption. Here, we report the growth and fabrication of GaAs based p-i-n solar cellscontaining ten layers of GaSb QRs. They show extended long wavelength photoresponse into the near-IR up to 1400 nm and enhanced short-circuit current compared to the GaAs control cell due to absorption of low energy photons. Although enhancement of the short-circuit current was observed, the thermionic emission of holes was found to be insufficient for ideal operation at room temperature.
KW - Solar Cells
KW - GaSb
KW - Molecular beam epitaxy
KW - Photoluminescence
M3 - Journal article
VL - 9937
JO - Proceedings of SPIE
JF - Proceedings of SPIE
SN - 0277-786X
M1 - 993708
ER -