12,000

We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK

93%

93% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > Weak localization in graphene.
View graph of relations

« Back

Weak localization in graphene.

Research output: Contribution to journalJournal article

Published

  • V. I. Fal’ko
  • K. Kechedzhi
  • Edward McCann
  • B. L. Altshuler
  • H. Suzuura
  • T. Ando
Journal publication date07/2007
JournalSolid State Communications
Journal number1-2
Volume143
Number of pages6
Pages33-38
Original languageEnglish

Abstract

We review the recently-developed theory of weak localization in monolayer and bilayer graphene. For high-density monolayer graphene and for any-density bilayers, the dominant factor affecting weak localization properties is trigonal warping of graphene bands, which reflects asymmetry of the carrier dispersion with respect to the center of the corresponding valley. The suppression of weak localization by trigonal warping is accompanied by a similar effect caused by random-bond disorder (due to bending of a graphene sheet) and by dislocation/antidislocation pairs. As a result, weak localization in graphene can be observed only in samples with sufficiently strong inter-valley scattering, which is reflected by a characteristic form of negative magnetoresistance in graphene-based structures.

Bibliographic note

The final, definitive version of this article has been published in the Journal, Solid State Communications 143 (1-2), 2007, © ELSEVIER.