Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Weak localization in graphene.
AU - Fal’ko, V. I.
AU - Kechedzhi, K.
AU - McCann, Edward
AU - Altshuler, B. L.
AU - Suzuura, H.
AU - Ando, T.
N1 - The final, definitive version of this article has been published in the Journal, Solid State Communications 143 (1-2), 2007, © ELSEVIER.
PY - 2007/7
Y1 - 2007/7
N2 - We review the recently-developed theory of weak localization in monolayer and bilayer graphene. For high-density monolayer graphene and for any-density bilayers, the dominant factor affecting weak localization properties is trigonal warping of graphene bands, which reflects asymmetry of the carrier dispersion with respect to the center of the corresponding valley. The suppression of weak localization by trigonal warping is accompanied by a similar effect caused by random-bond disorder (due to bending of a graphene sheet) and by dislocation/antidislocation pairs. As a result, weak localization in graphene can be observed only in samples with sufficiently strong inter-valley scattering, which is reflected by a characteristic form of negative magnetoresistance in graphene-based structures.
AB - We review the recently-developed theory of weak localization in monolayer and bilayer graphene. For high-density monolayer graphene and for any-density bilayers, the dominant factor affecting weak localization properties is trigonal warping of graphene bands, which reflects asymmetry of the carrier dispersion with respect to the center of the corresponding valley. The suppression of weak localization by trigonal warping is accompanied by a similar effect caused by random-bond disorder (due to bending of a graphene sheet) and by dislocation/antidislocation pairs. As a result, weak localization in graphene can be observed only in samples with sufficiently strong inter-valley scattering, which is reflected by a characteristic form of negative magnetoresistance in graphene-based structures.
KW - A. Disordered systems
KW - D. Electronic transport
KW - D. Quantum localization
U2 - 10.1016/j.ssc.2007.03.049
DO - 10.1016/j.ssc.2007.03.049
M3 - Journal article
VL - 143
SP - 33
EP - 38
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
IS - 1-2
ER -