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Weak localization in graphene.

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Weak localization in graphene. / Fal’ko, V. I.; Kechedzhi, K.; McCann, Edward et al.
In: Solid State Communications, Vol. 143, No. 1-2, 07.2007, p. 33-38.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Fal’ko, VI, Kechedzhi, K, McCann, E, Altshuler, BL, Suzuura, H & Ando, T 2007, 'Weak localization in graphene.', Solid State Communications, vol. 143, no. 1-2, pp. 33-38. https://doi.org/10.1016/j.ssc.2007.03.049

APA

Fal’ko, V. I., Kechedzhi, K., McCann, E., Altshuler, B. L., Suzuura, H., & Ando, T. (2007). Weak localization in graphene. Solid State Communications, 143(1-2), 33-38. https://doi.org/10.1016/j.ssc.2007.03.049

Vancouver

Fal’ko VI, Kechedzhi K, McCann E, Altshuler BL, Suzuura H, Ando T. Weak localization in graphene. Solid State Communications. 2007 Jul;143(1-2):33-38. doi: 10.1016/j.ssc.2007.03.049

Author

Fal’ko, V. I. ; Kechedzhi, K. ; McCann, Edward et al. / Weak localization in graphene. In: Solid State Communications. 2007 ; Vol. 143, No. 1-2. pp. 33-38.

Bibtex

@article{5823adbf0cd6462389233b69af70abb1,
title = "Weak localization in graphene.",
abstract = "We review the recently-developed theory of weak localization in monolayer and bilayer graphene. For high-density monolayer graphene and for any-density bilayers, the dominant factor affecting weak localization properties is trigonal warping of graphene bands, which reflects asymmetry of the carrier dispersion with respect to the center of the corresponding valley. The suppression of weak localization by trigonal warping is accompanied by a similar effect caused by random-bond disorder (due to bending of a graphene sheet) and by dislocation/antidislocation pairs. As a result, weak localization in graphene can be observed only in samples with sufficiently strong inter-valley scattering, which is reflected by a characteristic form of negative magnetoresistance in graphene-based structures.",
keywords = "A. Disordered systems, D. Electronic transport, D. Quantum localization",
author = "Fal{\textquoteright}ko, {V. I.} and K. Kechedzhi and Edward McCann and Altshuler, {B. L.} and H. Suzuura and T. Ando",
note = "The final, definitive version of this article has been published in the Journal, Solid State Communications 143 (1-2), 2007, {\textcopyright} ELSEVIER.",
year = "2007",
month = jul,
doi = "10.1016/j.ssc.2007.03.049",
language = "English",
volume = "143",
pages = "33--38",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "1-2",

}

RIS

TY - JOUR

T1 - Weak localization in graphene.

AU - Fal’ko, V. I.

AU - Kechedzhi, K.

AU - McCann, Edward

AU - Altshuler, B. L.

AU - Suzuura, H.

AU - Ando, T.

N1 - The final, definitive version of this article has been published in the Journal, Solid State Communications 143 (1-2), 2007, © ELSEVIER.

PY - 2007/7

Y1 - 2007/7

N2 - We review the recently-developed theory of weak localization in monolayer and bilayer graphene. For high-density monolayer graphene and for any-density bilayers, the dominant factor affecting weak localization properties is trigonal warping of graphene bands, which reflects asymmetry of the carrier dispersion with respect to the center of the corresponding valley. The suppression of weak localization by trigonal warping is accompanied by a similar effect caused by random-bond disorder (due to bending of a graphene sheet) and by dislocation/antidislocation pairs. As a result, weak localization in graphene can be observed only in samples with sufficiently strong inter-valley scattering, which is reflected by a characteristic form of negative magnetoresistance in graphene-based structures.

AB - We review the recently-developed theory of weak localization in monolayer and bilayer graphene. For high-density monolayer graphene and for any-density bilayers, the dominant factor affecting weak localization properties is trigonal warping of graphene bands, which reflects asymmetry of the carrier dispersion with respect to the center of the corresponding valley. The suppression of weak localization by trigonal warping is accompanied by a similar effect caused by random-bond disorder (due to bending of a graphene sheet) and by dislocation/antidislocation pairs. As a result, weak localization in graphene can be observed only in samples with sufficiently strong inter-valley scattering, which is reflected by a characteristic form of negative magnetoresistance in graphene-based structures.

KW - A. Disordered systems

KW - D. Electronic transport

KW - D. Quantum localization

U2 - 10.1016/j.ssc.2007.03.049

DO - 10.1016/j.ssc.2007.03.049

M3 - Journal article

VL - 143

SP - 33

EP - 38

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 1-2

ER -