Exploiting emerging interface misfit epitaxy to engineer cheaper, higher performance photodiodes for imaging, communications and gas monitoring - Research Portal | Lancaster University

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Exploiting emerging interface misfit epitaxy to engineer cheaper, higher performance photodiodes for imaging, communications and gas monitoring

Project: Research

Status	Finished
Effective start/end date	18/10/10 → 17/10/15

Funding

The Royal Academy of Engineering: £511,577.00

Marshall, Andrew (Principal Investigator)

Research outputs

InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low-frequency noise performance
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions—composite structures grown using interfacial misfit arrays
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers – Grown on GaAs, using an interfacial misfit array, and on native GaSb
Research output: Contribution to Journal/Magazine › Journal article › peer-review
GaAs and AlGaAs APDs with GaSb absorption regions in a separate absorption and multiplication structure using a hetero-lattice interface
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Room temperature mid-infrared emission from faceted InAsSb multi quantum wells embedded in InAs nanowires
Research output: Contribution to Journal/Magazine › Journal article › peer-review