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    Rights statement: Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 104, 2014 and may be found at http://scitation.aip.org/content/aip/journal/apl/104/21/10.1063/1.4879848

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Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions—composite structures grown using interfacial misfit arrays

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Article number213502
<mark>Journal publication date</mark>28/05/2014
<mark>Journal</mark>Applied Physics Letters
Volume104
Number of pages4
Publication StatusPublished
<mark>Original language</mark>English

Abstract

Interfacial misfit arrays were embedded within two avalanche photodiode (APD) structures. This allowed GaSb absorption layers to be combined with wide-bandgap multiplication regions, consisting of GaAs and Al0.8Ga0.2As, respectively. The GaAs APD represents the simplest case. The Al0.8Ga0.2As APD shows reduced dark currents of 5.07 μAcm−2 at 90% of the breakdown voltage, and values for effective below 0.2. Random-path-length modeled excess noise is compared with experimental data, for both samples. The designs could be developed further, allowing operation to be extended to longer wavelengths, using other established absorber materials which are lattice matched to GaSb.

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Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 104, 2014 and may be found at http://scitation.aip.org/content/aip/journal/apl/104/21/10.1063/1.4879848