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Dr Adam Craig

Senior Research Associate, Research Student

  1. 2013
  2. Published

    Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays

    Craig, A., Marshall, A., Tian, Z-B., Krishna, S. & Krier, A., 16/12/2013, In: Applied Physics Letters. 103, 4 p., 253502.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  3. 2014
  4. Published

    Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions—composite structures grown using interfacial misfit arrays

    Craig, A., Reyner, C. J., Marshall, A. & Huffaker, D. L., 28/05/2014, In: Applied Physics Letters. 104, 4 p., 213502.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  5. Published

    Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers – Grown on GaAs, using an interfacial misfit array, and on native GaSb

    Craig, A., Marshall, A., Tian, Z-B. & Krishna, S., 11/2014, In: Infrared Physics and Technology. 67, p. 210-213 4 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  6. 2015
  7. Published

    GaAs and AlGaAs APDs with GaSb absorption regions in a separate absorption and multiplication structure using a hetero-lattice interface

    Marshall, A., Craig, A., Reyner, C. J. & Huffaker, D. L., 05/2015, In: Infrared Physics and Technology. 70, p. 168-170 3 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  8. Published

    Reprint of "mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers - Grown on GaAs, using an interfacial misfit array, and on native GaSb"

    Craig, A., Marshall, A. R. J., Tian, Z-B. & Krishna, S., 05/2015, In: Infrared Physics and Technology. 70, p. 107-110 4 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  9. Published

    Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb

    Craig, A., Jain, M., Wicks, G., Golding, T., Hossain, K., McEwan, K., Howle, C., Percy, B. & Marshall, A., 20/05/2015, In: Applied Physics Letters. 106, 20, 5 p., 201103.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  10. Published

    InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low-frequency noise performance

    Craig, A., Thompson, M., Tian, Z-B., Krishna, S., Krier, A. & Marshall, A., 24/08/2015, In: Semiconductor Science and Technology. 30, 10, 7 p., 105011.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  11. 2016
  12. Published

    Novel structures for lattice-mismatched infrared photodetectors

    Craig, A. P., 2016, Lancaster University. 163 p.

    Research output: ThesisDoctoral Thesis

  13. Published

    Low leakage-current InAsSb nanowire photodetectors on silicon

    Thompson, M. D., Alhodaib, A., Craig, A. P., Robson, A. J., Aziz, A., Krier, A., Svensson, J., Wernersson, L., Sanchez, A. M. & Marshall, A. R. J., 13/01/2016, In: Nano Letters. 16, 1, p. 182-187 6 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  14. Published

    Characterization of 6.1 Å III-V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy

    Craig, A., Carrington, P. J., Liu, H. & Marshall, A. R. J., 1/02/2016, In: Journal of Crystal Growth. 435, p. 56-61 6 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

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