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Professor Anthony Krier

Emeritus Professor

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  1. Journal article
  2. Published

    Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth.

    Chen, R., Phann, S., Sun, H. D., Zhuang, Q., Godenir, A. M. R. & Krier, A., 28/12/2009, In: Applied Physics Letters. 95, 26, p. 261905

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Molecular beam epitaxial (MBE) growth and spectroscopy of dilute nitride InAsN:Sb for mid-infrared applications.

    Zhuang, Q. & Krier, A., 15/12/2009, In: IET Optoelectronics. 3, 6, p. 248-258 11 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Effect of low nitrogen concentrations on the electronic properties of InAs1-xNx.

    Patane, A., Feu, W. H. M., Makarovsky, O., Drachenko, O., Eaves, L., Krier, A., Zhuang, Q. D., Helm, M., Goiran, M. & Hill, G., 16/09/2009, In: Physical review B. 80, 11, p. 115207

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range.

    de la Mare, M., Zhuang, Q., Krier, A., Patane, A. & Dhar, S., 22/07/2009, In: Applied Physics Letters. 95, 3, p. 031110

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes.

    Cook, N. B. & Krier, A., 13/07/2009, In: Applied Physics Letters. 95, 2, p. 021110

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes.

    Carrington, P. J., Zhuang, Q., Yin, M. & Krier, A., 07/2009, In: Semiconductor Science and Technology. 24, 7, p. 075001

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    Photoreflectance study of the energy gap and spin-orbit splitting in InNAs alloys.

    Kudrawiec, R., Misiewicz, J., Zhuang, Q., Godenir, A. M. R. & Krier, A., 14/04/2009, In: Applied Physics Letters. 94, 15, p. 151902

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K.

    Nash, G. R., Przeslak, S. J. B., Smith, S. J., de Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T., 5/03/2009, In: Applied Physics Letters. 94, 9, p. 091111

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications

    Carrington, P. J., Solov'ev, V. A., Zhuang, Q., Vanov, S. V. & Krier, A., 03/2009, In: Microelectronics Journal. 40, 3, p. 469-472 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  11. Published

    Magnetoresistance and electron mobility in dilute nitride InAsN alloys

    Zhuang, Q., Feu, W. H. M., Patane, A., Makarovsky, O., Allison, G., Eaves, L., De La Mare, M., Krier, A. & Hill, G., 2009, In: AIP Conference Proceedings. 1288

    Research output: Contribution to Journal/Magazine › Journal article

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