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Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published
<mark>Journal publication date</mark>22/07/2009
<mark>Journal</mark>Applied Physics Letters
Issue number3
Volume95
Pages (from-to)031110
Publication StatusPublished
<mark>Original language</mark>English

Abstract

We report the growth of InAsN onto GaAs substrates using nitrogen plasma source molecular beam epitaxy. We describe the spectral properties of InAsN alloys with N-content in the range of 0%-1% and photoluminescence emission in the midinfrared spectral range. The photoluminescence emission of the sample containing 1% N reveals localized energy levels resonant with the conduction band states of InAsN.

Bibliographic note

Article number: 031110