Research output: Contribution to Journal/Magazine › Journal article › peer-review
| <mark>Journal publication date</mark> | 03/2009 |
|---|---|
| <mark>Journal</mark> | Microelectronics Journal |
| Issue number | 3 |
| Volume | 40 |
| Number of pages | 4 |
| Pages (from-to) | 469-472 |
| Publication Status | Published |
| <mark>Original language</mark> | English |
We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix which exhibit intense mid-infrared photoluminescence up to room temperature. The InSb QD sheets were formed by briefly exposing the surface to an antimony flux (Sb-2) exploiting an As-Sb anion exchange reaction. Light emitting diodes were fabricated using 10 InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8 mu m at room temperature. (C) 2008 Elsevier Ltd. All rights reserved.