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Professor Anthony Krier

Emeritus Professor

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  1. Published

    Solution processed SnO2:Sb transparent conductive oxide as alternative to Indium Tin Oxide for applications in Organic Light Emitting Diodes

    Bin Esro, M., Georgakopoulos, S., Lu, H., Vourlias, G., Krier, A., Milne, W. I., Gillin, W. P. & Adamopoulos, G., 28/04/2016, In: Journal of Materials Chemistry C. 4, 16, p. 3563-3570 8 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  2. Published

    Solution processed a-LaAlO3 gate dielectrics for their applications in thin film transistors employing metal oxide semiconducting channels

    Bin Esro, M., Mazzocco, R., Vourlias, G., Krier, A., Milne, W. I., Kolosov, O. & Adamopoulos, G., 2015.

    Research output: Contribution to conference - Without ISBN/ISSN › Poster › peer-review

  3. E-pub ahead of print

    Simulation of the enhanced infrared photoresponse of type-II GaSb/GaAs quantum ring solar cells

    Wagener, M. C., Carrington, P. J., Botha, J. R. & Krier, A., 6/08/2013, (E-pub ahead of print) In: Applied Physics Letters. 103, 6, 4 p., 063902.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Semiconductor WGM lasers for the mid-IR spectral range

    Sherstnev, V. V., Monakhov, A. M., Astakhova, A. P., Kislyakova, A. Y., Yakovlev, Y. P., Averkiev, N. S., Krier, A. & Hill, G., 09/2005, In: Semiconductors. 39, 9, p. 1087-1092 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    Seeing the invisible - ultrasonic force microscopy for true subsurface elastic imaging of semiconductor nanostructures with nanoscale resolution

    Kolosov, O., Dinelli, F., Henini, M., Krier, A., Hayne, M. & Pingue, P., 2012, NSTI-Nanotech 2012. Santa Clara, USA: CRC PRESS-TAYLOR & FRANCIS GROUP, p. 24-26 3 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  6. Published

    Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0-89 lattice matched to InAs. .

    Moiseev, K. D., Krier, A. & Yakovlev, Y. P., 08/2004, In: Journal of Electronic Materials. 33, 8, p. 867-872 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 mu m. .

    Gao, H. H., Krier, A. & Sherstnev, V. V., 7/08/2000, In: Applied Physics Letters. 77, 6, p. 872-874 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode

    Di Paola, D. M., Lu, Q., Repiso, E., Kesaria, M., Makarovsky, O., Krier, A. & Patanè, A., 6/04/2020, In: Applied Physics Letters. 116, 14, 5 p., 142108.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Room temperature photoluminescence at 4.5 mu m from InAsN

    Zhuang, Q., Godenir, A. M. R., Krier, A., Lai, K. T. & Haywood, S. K., 26/03/2008, In: Journal of Applied Physics. 103, 6, p. 063520

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE

    Kesaria, M., De La Mare, M. & Krier, A., 2/11/2016, In: Journal of Physics D: Applied Physics. 49, 43, p. 435107 4 p., 43.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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