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Professor Anthony Krier

Emeritus Professor

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  1. Published

    Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth.

    Chen, R., Phann, S., Sun, H. D., Zhuang, Q., Godenir, A. M. R. & Krier, A., 28/12/2009, In: Applied Physics Letters. 95, 26, p. 261905

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  2. Published

    Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range.

    de la Mare, M., Carrington, P. J., Wheatley, R., Zhuang, Q., Beanland, R., Sanchez, A. M., Krier, A. & EPSRC Studentship for MDLM (Funder), 1/09/2010, In: Journal of Physics D: Applied Physics. 43, 34, p. 345103

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Photoluminescence in InAsN epilayers grown by molecular beam epitaxy

    Zhuang, Q., Godenir, A. & Krier, A., 10/06/2008, In: Journal of Physics D: Applied Physics. 41, 13, p. 132002

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy. .

    Krier, A., Krier, S. E. & Labadi, Z., 09/2000, In: Applied Physics A. 71, 3, p. 249-253 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy. .

    Liu, P. W., Tsai, G., Lin, H. H., Krier, A., Zhuang, Q. D. & Stone, M, M., 13/11/2006, In: Applied Physics Letters. 89, 20, p. 201115

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    Wagener, M. C., Carrington, P. J., Botha, J. R. & Krier, A., 7/01/2014, In: Journal of Applied Physics. 115, 1, 3 p., 014302.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy - art. no. 647918

    Smirnov, V. M., Batty, P. J., Krier, A. & Jones, R., 2007, Quantum Sensing and Nanophotonic Devices IV. Razeghi, M. & Brown, GJ. (eds.). BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, p. 47918-47918 8 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  8. Published

    Peculiarities of the hydrogenated In(AsN) alloy

    Birindelli, S., Kesaria, M., Giubertoni, D., Pettinari, G., Velichko, A. V., Zhuang, Q., Krier, A., Patane, A., Polimeni, A. & Capizzi, M., 14/09/2015, In: Semiconductor Science and Technology. 30, p. 105030 10 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Optical switching in midinfrared light-emitting diodes .

    Krier, A., Sherstnev, V. V., Gao, H. H., Monakhov, A. M. & Hill, G., 22/04/2002, In: Applied Physics Letters. 80, 16, p. 2821-2823 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    Optical properties of metamorphic type-I InAs1-xSbx/AlyIn1-yAs quantum wells grown on GaAs for the mid-infrared spectral range

    Repiso Menendez, E., Broderick, C., de la Mata, M., Arkani, R., Lu, Q., Marshall, A., Molina, S., O'Reilly, E., Carrington, P. & Krier, A., 30/08/2019, In: Journal of Physics D: Applied Physics. 52, 10 p., 465102.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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