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Professor Anthony Krier

Emeritus Professor

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  1. Journal article
  2. Published

    The influence of melt purification and structure defects on mid-infrared light emitting diodes. .

    Krier, A. & Sherstnev, V. V., 7/07/2003, In: Journal of Physics D: Applied Physics. 36, 13, p. 1484-1488 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Mid-infrared ring laser. .

    Krier, A., Sherstnev, V. V., Wright, D., Monakhov, A. M. & Hill, G., 12/06/2003, In: Electronics Letters. 39, 12, p. 916-917 2 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Mid-infrared lasing induced by noise.

    Sherstnev, V. V., Krier, A., Balanov, A. G., Janson, N. B., Silchenko, A. N. & McClintock, P. V. E., 03/2003, In: Fluctuation and Noise Letters. 3, 1, p. L91-L95 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 mu m. .

    Choulis, S. A., Andreev, A., Merrick, M., Adams, A. R., Murdin, B. N., Krier, A. & Sherstnev, V. V., 24/02/2003, In: Applied Physics Letters. 82, 8, p. 1149-1151 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    The effect of pressure on the radiative efficiency of InAs based light emitting diodes. .

    Choulis, S. A., Andreev, A., Merrick, M., Jin, S., Clarke, D. G., Murdin, B. N., Adams, A. R., Krier, A. & Sherstnev, V. V., 1/02/2003, In: physica status solidi (b). 235, 2, p. 312-316 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    Growth of self-assembled PbSe quantum-dots on GaSb(100) by liquid phase epitaxy. .

    Huang, X. L., Labadi, Z., Hammiche, A. & Krier, A., 7/12/2002, In: Journal of Physics D: Applied Physics. 35, 23, p. 3091-3095 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    Mid-infrared electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. .

    Krier, A. & Huang, X. L., 11/2002, In: Physica E: Low-dimensional Systems and Nanostructures. 15, 3, p. 159-163 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Tuning characteristics of InAsSb continuous-wave lasers. .

    Sherstnev, V., Krier, A., Popov, A. & Werle, P., 20/05/2002, In: Applied Physics Letters. 80, 20, p. 3676-3678 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    Optical switching in midinfrared light-emitting diodes .

    Krier, A., Sherstnev, V. V., Gao, H. H., Monakhov, A. M. & Hill, G., 22/04/2002, In: Applied Physics Letters. 80, 16, p. 2821-2823 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  11. Published

    Interface-induced electroluminescence in the type IIP-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 single heterojunction.

    Moiseev, K. D., Krier, A., Mikhailova, M. P. & Yakovlev, Y. P., 7/04/2002, In: Journal of Physics D: Applied Physics. 35, 7, p. 631-636 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  12. Published

    High tunability and superluminescence in InAs mid-infrared light emitting diodes. .

    Sherstnev, V. V., Krier, A. & Hill, G., 7/02/2002, In: Journal of Physics D: Applied Physics. 35, 3, p. 196-198 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  13. Published

    General theory of multi-phase melt crystallization. .

    Charykov, N. A., Sherstnev, V. V. & Krier, A., 02/2002, In: Journal of Crystal Growth. 234, 4, p. 762-772 11 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  14. Published

    Interface photoluminescence in type II broken-gap P-Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructures. .

    Moiseev, K. D., Krier, A. & Yakovlev, Y. P., 15/10/2001, In: Journal of Applied Physics. 90, 8, p. 3988-3992 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  15. Published

    Liquid phase epitaxial growth and morphology of InSb quantum dots. .

    Krier, A., Huang, X. L. & Hammiche, A., 21/03/2001, In: Journal of Physics D: Applied Physics. 34, 6, p. 874-878 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  16. Published

    Physics and technology of mid-infrared light emitting diodes. .

    Krier, A., 15/03/2001, In: Philosophical Transactions A: Mathematical, Physical and Engineering Sciences . 359, 1780, p. 599-618 20 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  17. Published

    LEDs for formaldehyde detection at 3.6 mu m. .

    Krier, A. & Sherstnev, V. V., 7/02/2001, In: Journal of Physics D: Applied Physics. 34, 3, p. 428-432 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  18. Published

    Investigation on InGaAs/InAlAs quantum cascade lasers.

    Zhang, Q. S., Liu, F. Q., Zhang, Y. Z., Wang, Z. G., Gao, H. H. & Krier, A., 2001, In: Journal of Infrared and Millimeter Waves. 20, 1, p. 41-43 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  19. Published

    Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. .

    Krier, A., Sherstnev, V. V., Labadi, Z., Krier, S. E. & Gao, H. H., 21/12/2000, In: Journal of Physics D: Applied Physics. 33, 24, p. 3156-3160 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  20. Published

    Superluminescence in InAsSb circular-ring-mode light-emitting diodes for CO gas detection. .

    Sherstnev, V. V., Monahov, A. M., Krier, A. & Hill, G., 11/12/2000, In: Applied Physics Letters. 77, 24, p. 3908-3910 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  21. Published

    Midinfrared photoluminescence of InAsSb quantum dots grown by liquid phase epitaxy. .

    Krier, A., Huang, X. L. & Hammiche, A., 4/12/2000, In: Applied Physics Letters. 77, 23, p. 3791-3793 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  22. Published

    Nanoindentation studies of MOVPE grown GaAs/InP heterostructures. .

    Arivuoli, D., Lawson, N. S., Krier, A., Attolini, G. & Pelosi, C., 16/10/2000, In: Materials Chemistry and Physics. 66, 2 - 3, p. 207-212 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  23. Published

    Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy. .

    Krier, A., Krier, S. E. & Labadi, Z., 09/2000, In: Applied Physics A. 71, 3, p. 249-253 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  24. Published

    Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 mu m. .

    Gao, H. H., Krier, A. & Sherstnev, V. V., 7/08/2000, In: Applied Physics Letters. 77, 6, p. 872-874 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  25. Published

    A novel LED module for the detection of H2S at 3.8 mu m. .

    Krier, A., Sherstnev, V. V. & Gao, H. H., 21/07/2000, In: Journal of Physics D: Applied Physics. 33, 14, p. 1656-1661 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  26. Published

    Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs. .

    Krier, A., Gao, H. H. & Sherstnev, V. V., 06/2000, In: IEE Proceedings - Optoelectronics. 147, 3, p. 217-221 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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