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Mid-infrared ring laser. .

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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  • A. Krier
  • V. V. Sherstnev
  • D. Wright
  • A. M. Monakhov
  • G. Hill
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<mark>Journal publication date</mark>12/06/2003
<mark>Journal</mark>Electronics Letters
Issue number12
Volume39
Number of pages2
Pages (from-to)916-917
Publication StatusPublished
<mark>Original language</mark>English

Abstract

The first mid-infrared ring laser diode based on InAs and operating in the mid-infrared spectral region near 3 pin and with a maximum operating temperature of 125 K is reported. The source is based on a symmetrical double heterostructure with large band offsets.