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Professor Anthony Krier

Emeritus Professor

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  1. Journal article
  2. Published

    Electron coherence length and mobility in highly mismatched III-N-V alloys.

    Patane, A., Allison, G., Eaves, L., Kozlova, N. V., Zhuang, Q. D., Krier, A., Hopkinson, M. & Hill, G., 23/12/2008, In: Applied Physics Letters. 93, 25, p. 252106

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Growth optimization of self-organized InSb/InAs quantum dots.

    Zhuang, Q., Carrington, P. J. & Krier, A., 13/11/2008, In: Journal of Physics D: Applied Physics. 41, 23, 4 p., 232003.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance

    Cripps, S. A., Hosea, T. J. C., Krier, A., Smirnov, V., Batty, P. J., Zhuang, Q. D., Lin, H. H., Liu, P. W. & Tsai, G., 30/09/2008, In: Thin Solid Films. 516, 22, p. 8049-8058 10 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers.

    Yin, M., Nash, G. R., Coomber, S. D., Buckle, L., Carrington, P. J., Krier, A., Andreev, A., Przeslak, S. J. B., de Valicourt, G., Smith, S. J., Emeny, M. T. & Ashley, T., 23/09/2008, In: Applied Physics Letters. 93, 12, p. 121106

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    Molecular beam epitaxial growth of InAsN : Sb for midinfrared Optoelectronics

    Zhuang, Q., Godenir, A., Krier, A., Tsai, G. & Lin, H. H., 22/09/2008, In: Applied Physics Letters. 93, 12, p. 121903

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes.

    Carrington, P. J., Solov'ev, V. A., Zhuang, Q., Krier, A. & Ivanov, S. V., 1/09/2008, In: Applied Physics Letters. 93, 9, p. 091101

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    Properties of dilute InAsN layers grown by liquid phase epitaxy.

    Dhar, S., Das, T. D., de la Mare, M. & Krier, A., 22/08/2008, In: Applied Physics Letters. 93, 7, p. 071905

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Photoluminescence in InAsN epilayers grown by molecular beam epitaxy

    Zhuang, Q., Godenir, A. & Krier, A., 10/06/2008, In: Journal of Physics D: Applied Physics. 41, 13, p. 132002

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    Room temperature photoluminescence at 4.5 mu m from InAsN

    Zhuang, Q., Godenir, A. M. R., Krier, A., Lai, K. T. & Haywood, S. K., 26/03/2008, In: Journal of Applied Physics. 103, 6, p. 063520

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  11. Published

    Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes

    Carrington, P., Solov'ev, V. A., Zhuang, Q., Ivanov, S. V. & Krier, A., 1/02/2008, In: Proceedings of SPIE. 6900, 69000I.

    Research output: Contribution to Journal/Magazine › Journal article

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