Home > Research > Publications & Outputs > Growth optimization of self-organized InSb/InAs...
View graph of relations

Growth optimization of self-organized InSb/InAs quantum dots.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Article number232003
<mark>Journal publication date</mark>13/11/2008
<mark>Journal</mark>Journal of Physics D: Applied Physics
Issue number23
Number of pages4
Publication StatusPublished
<mark>Original language</mark>English


The authors report the growth optimization of InSb/InAs quantum dots (QDs) by molecular beam epitaxy (MBE). QDs morphology and optical properties were investigated by atomic force microscope and photoluminescence (PL). We observed that the migration enhanced epitaxy technique without the annealing stage is a superior method for producing high quality coherent QDs with a high density of similar to 1.2 x 10(10) dots cm(-2). PL emission from buried InSb/InAs QDs was observed at low temperatures at a wavelength near 3.3 mu m. In addition, the emission efficiency was dramatically improved for the samples where the InAs cap layer was grown at a lower temperature, indicating that low growth temperatures are required to maintain good properties of QDs which is due to reduced As/Sb exchange.

Bibliographic note

Article number: 232003