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Professor Manus Hayne SFHEA

Professor

  1. Journal article
  2. Published

    Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells

    Tizno, O., Marshall, A., Fernández-Delgado, N., Herrera, M., Molina, S. I. & Hayne, M., 20/06/2019, In: Scientific Reports. 9, 8 p., 8950.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  3. Published

    Binding energies of excitonic complexes in type-II quantum rings from diffusion quantum Monte Carlo calculations

    Thomas, D., Hunt, R. J., Drummond, N. D. & Hayne, M., 15/03/2019, In: Physical Review B: Condensed Matter and Materials Physics. 99, 11, 6 p., 115306.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  4. Published

    Transport of modulation-doped Al0.2Ga0.8Sb/GaSb heterojunctions

    Hanks, L., Hayne, M., Marshall, A. R. J. & Ponomarenko, L. A., 2/03/2018, In: Journal of Physics: Conference Series. 964, 5 p., 012006.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  5. Published

    Exciton confinement in strain-engineered metamorphic InAs/InxGa1-xAs quantum dots

    Khattak, S. A., Hayne, M., Huang, J., Vanacken, J., Moshchalkov, V., Seravalli, L., Trevisi, G. & Frigeri, P., 15/11/2017, In: Physical review B. 96, 19, 8 p., 195301.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  6. Published

    Photoelectrolysis Using Type-II Semiconductor Heterojunctions

    Hayne, M. & Harrison, S., 14/09/2017, In: Scientific Reports. 7, 11 p., 11638.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  7. Published

    Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots

    Fernández-Delgado, N., Herrera, M., Chisholm, M. F., Ahmad Kamarudin, M., Zhuang, Q., Hayne, M. & Molina, S. I., 15/02/2017, In: Applied Surface Science. 395, p. 136-139 4 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  8. Published

    Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots

    Fernández-Delgado, N., Herrera, M., Chisholm, M. F., Ahmad Kamarudin, M., Zhuang, Q., Hayne, M. & Molina, S. I., 08/2016, In: Journal of Materials Science. 51, 16, p. 7691-7698 8 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  9. Published

    An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots

    Qiu, F., Qiu, W., Li, Y., Wang, X., Zhang, Y., Zhou, X., Lv, Y., Sun, Y., Deng, H., Hu, S., Dai, N., Wang, C., Yang, Y., Zhuang, Q., Hayne, M. & Krier, A., 12/02/2016, In: Nanotechnology. 27, 6, 6 p., 065602.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  10. Published

    Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs

    Harrison, S., Young, M., Hodgson, P. D., Young, R. J., Hayne, M., Danos, E., Schliwa, A., Strittmatter, A., Lenz, A., Eisele, H., Pohl, U. & Bimberg, D., 2/02/2016, In: Physical review B. 93, 9 p., 085302.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  11. Published

    GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells

    Hodgson, P., Hayne, M., Robson, A., Zhuang, Q. & Danos, E., 28/01/2016, In: Journal of Applied Physics. 119, 4, 7 p., 044305.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

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