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Dr Qi Lu

Formerly at Lancaster University

  1. Published

    High-speed mid-wave infrared interband cascade photodetector at room temperature

    XIE, Z., HUANG, J., CHAI, X., DENG, Z., CHEN, Y., LU, Q., XU, Z., CHEN, J., ZHOU, Y. & CHEN, B., 20/11/2020, In: Optics Express. 28, 24, p. 36915-36923 9 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  2. Published

    Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells

    Wagener, M. C., Montesdeoca Cardenes, D., Lu, Q., Marshall, A. R. J., Krier, A., Botha, J. R. & Carrington, P. J., 01/2019, In: Solar Energy Materials and Solar Cells. 189, p. 233-238 6 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  3. Published

    GaSb-based solar cells for multi-junction integration on Si substrates

    Tournet, J., Parola, S., Vauthelin, A., Montesdeoca Cardenes, D., Soresi, S., Martinez, F., Lu, Q., Cuminal, Y., Carrington, P. J., Décobert, J., Krier, A., Rouillard, Y. & Tournié, E., 03/2019, In: Solar Energy Materials and Solar Cells. 191, p. 444-450 7 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  4. Published

    Suppression of the surface “dead region” for fabrication of GaInAsSb thermophotovoltaic cells

    Tang, L., Xu, C., Liu, Z., Lu, Q., Marshall, A. & Krier, A., 04/2017, In: Solar Energy Materials and Solar Cells. 163, p. 263-269 7 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  5. Published

    Optical properties of metamorphic type-I InAs1-xSbx/AlyIn1-yAs quantum wells grown on GaAs for the mid-infrared spectral range

    Repiso Menendez, E., Broderick, C., de la Mata, M., Arkani, R., Lu, Q., Marshall, A., Molina, S., O'Reilly, E., Carrington, P. & Krier, A., 30/08/2019, In: Journal of Physics D: Applied Physics. 52, 10 p., 465102.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  6. Published

    InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers

    Lu, Q., Zhuang, Q., Marshall, A., Kesaria, M., Beanland, R. & Krier, A., 12/05/2014, In: Semiconductor Science and Technology. 29, 7, 8 p., 075011 .

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  7. Published

    Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

    Lu, Q., Zhuang, Q., Hayton, J., Yin, M. & Krier, A., 2014, In: Applied Physics Letters. 105, 3, 3 p., 031115.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  8. Published

    Gain and threshold current in type II In(As)Sb mid-infrared quantum dot lasers

    Lu, Q., Zhuang, Q. & Krier, A., 15/04/2015, In: Photonics. 2, 2, p. 414-425 12 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  9. Unpublished

    Mid-infrared antimonide based type II quantum dot lasers for use in gas sensing

    Lu, Q., 2015, (Unpublished) Lancaster University. 152 p.

    Research output: ThesisDoctoral Thesis

  10. Published

    InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000°C

    Lu, Q., Zhou, X., Krysa, A., Marshall, A., Carrington, P., Tan, C-H. & Krier, A., 1/06/2018, In: Solar Energy Materials and Solar Cells. 179, p. 334-338 5 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

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