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2e periodic modulation of the I-V curve of a current-biased superconducting transistor

Research output: Contribution to journalJournal articlepeer-review

Published
  • Yu.A. Pashkin
  • D.B. Haviland
  • L.S. Kuzmin
  • C.D. Chen
  • P. Delsing
  • T. Claeson
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<mark>Journal publication date</mark>1994
<mark>Journal</mark>Physica B: Condensed Matter
Volume194-196
Number of pages2
Pages (from-to)1049-1050
Publication StatusPublished
<mark>Original language</mark>English

Abstract

We have made an experimental study of the tunnelling through a current-biased superconducting single electron transistor at temperatures down to 40 mK. The current-biased transistor consisted of two ultrasmall tunnel junctions connected in series, biased through two high-Ohmic resistors (length 10 μm) located very close to the tunnel junctions. The two-probe measurement of the current-voltage characteristic has shown a periodic modulation with a gate voltage, having two separate fundamental periods in gate charge, ΔQ1=e and ΔQ2=2e, as well as higher harmonics of these two. We have found that the amplitude of the 2e-component was enhanced as superconductivity of the electrodes was suppressed with an external magnetic field. These results are discussed within the context of a parity model.