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A review on carbon based materials as on-chip interconnects

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A review on carbon based materials as on-chip interconnects. / Sadeghi, Hatef; Redoute, Jean-Michel; Lai, Daniel T. H. et al.
In: Proceedings of SPIE, Vol. 8204, 2011.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Sadeghi, H, Redoute, J-M, Lai, DTH, Ahmadi, MT & Ismail, R 2011, 'A review on carbon based materials as on-chip interconnects', Proceedings of SPIE, vol. 8204. https://doi.org/10.1117/12.903196

APA

Sadeghi, H., Redoute, J.-M., Lai, D. T. H., Ahmadi, M. T., & Ismail, R. (2011). A review on carbon based materials as on-chip interconnects. Proceedings of SPIE, 8204. https://doi.org/10.1117/12.903196

Vancouver

Sadeghi H, Redoute JM, Lai DTH, Ahmadi MT, Ismail R. A review on carbon based materials as on-chip interconnects. Proceedings of SPIE. 2011;8204. doi: 10.1117/12.903196

Author

Sadeghi, Hatef ; Redoute, Jean-Michel ; Lai, Daniel T. H. et al. / A review on carbon based materials as on-chip interconnects. In: Proceedings of SPIE. 2011 ; Vol. 8204.

Bibtex

@article{e05ce2cc6b0a44b1bd94c18772da5d74,
title = "A review on carbon based materials as on-chip interconnects",
abstract = "Interconnect wires are major technology components of modern high-speed integrated circuits. To overcome the latter's degradation caused by increasing miniaturization, there is an urgent need to look for alternative technologies. Since carbon based materials generate promising results, this paper focuses on describing the electrical properties of carbon based materials, in particular the use of graphene nanoribbon (GNR) as well as trilayer graphene nanoribbon (TGN) as next generation interconnects: since the conductance of TGN is less affected by external fields compared to GNR, it forms an improved choice for on-chip interconnects. The conductance model of TGN is derived and discussed in detail.",
keywords = "Model, Conductance, Interconnects, Carbon based materials, Graphene, Multilayer graphene, GNR, BGN, TGN, CNT, GRAPHENE NANORIBBON INTERCONNECTS, EPITAXIAL GRAPHENE, TRILAYER GRAPHENE, BILAYER, TRANSISTORS, STATE",
author = "Hatef Sadeghi and Jean-Michel Redoute and Lai, {Daniel T. H.} and Ahmadi, {M. T.} and Razali Ismail",
year = "2011",
doi = "10.1117/12.903196",
language = "English",
volume = "8204",
journal = "Proceedings of SPIE",
issn = "0277-786X",
publisher = "SPIE",
note = "Conference on Smart Nano-Micro Materials and Devices/SPIE Smart Nano + Micro Materials and Devices Forum ; Conference date: 05-12-2011 Through 07-12-2011",

}

RIS

TY - JOUR

T1 - A review on carbon based materials as on-chip interconnects

AU - Sadeghi, Hatef

AU - Redoute, Jean-Michel

AU - Lai, Daniel T. H.

AU - Ahmadi, M. T.

AU - Ismail, Razali

PY - 2011

Y1 - 2011

N2 - Interconnect wires are major technology components of modern high-speed integrated circuits. To overcome the latter's degradation caused by increasing miniaturization, there is an urgent need to look for alternative technologies. Since carbon based materials generate promising results, this paper focuses on describing the electrical properties of carbon based materials, in particular the use of graphene nanoribbon (GNR) as well as trilayer graphene nanoribbon (TGN) as next generation interconnects: since the conductance of TGN is less affected by external fields compared to GNR, it forms an improved choice for on-chip interconnects. The conductance model of TGN is derived and discussed in detail.

AB - Interconnect wires are major technology components of modern high-speed integrated circuits. To overcome the latter's degradation caused by increasing miniaturization, there is an urgent need to look for alternative technologies. Since carbon based materials generate promising results, this paper focuses on describing the electrical properties of carbon based materials, in particular the use of graphene nanoribbon (GNR) as well as trilayer graphene nanoribbon (TGN) as next generation interconnects: since the conductance of TGN is less affected by external fields compared to GNR, it forms an improved choice for on-chip interconnects. The conductance model of TGN is derived and discussed in detail.

KW - Model

KW - Conductance

KW - Interconnects

KW - Carbon based materials

KW - Graphene

KW - Multilayer graphene

KW - GNR

KW - BGN

KW - TGN

KW - CNT

KW - GRAPHENE NANORIBBON INTERCONNECTS

KW - EPITAXIAL GRAPHENE

KW - TRILAYER GRAPHENE

KW - BILAYER

KW - TRANSISTORS

KW - STATE

U2 - 10.1117/12.903196

DO - 10.1117/12.903196

M3 - Journal article

VL - 8204

JO - Proceedings of SPIE

JF - Proceedings of SPIE

SN - 0277-786X

T2 - Conference on Smart Nano-Micro Materials and Devices/SPIE Smart Nano + Micro Materials and Devices Forum

Y2 - 5 December 2011 through 7 December 2011

ER -