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Alpha contamination assay, dosimetry and spectrometry using charge coupled devices

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

Published
Publication date16/10/2017
Host publication2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop, NSS/MIC/RTSD 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (electronic)9781509016426
<mark>Original language</mark>English
Event2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop, NSS/MIC/RTSD 2016 - Strasbourg, France
Duration: 29/10/20166/11/2016

Conference

Conference2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop, NSS/MIC/RTSD 2016
Country/TerritoryFrance
CityStrasbourg
Period29/10/166/11/16

Publication series

Name2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop, NSS/MIC/RTSD 2016
Volume2017-January

Conference

Conference2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop, NSS/MIC/RTSD 2016
Country/TerritoryFrance
CityStrasbourg
Period29/10/166/11/16

Abstract

The potential of using charge coupled devices (CCDs) to perform in-situ spectroscopy of alpha contamination has been investigated. The literature describing previous research shows that alpha particles give a distinctive readout from CCDs when compared with other types of radiation. TRIM (Transport of Ions in Matter) simulations have been performed to identify optimum features of CCDs for detecting alpha particles. It has been shown that thinner gate structures (i.e. less than 2 μm thickness) are preferable for low-energy alpha particles. For high-energy particles a sensitive region of at least 56 μm is required for maximum charge collection. More than 90% of the ionization has been shown to occur in the sensitive region for a wide range of alpha particle energies using typical CCD specifications and 78% useful ionization occurred for a thick structure at an energy of 2.232 MeV. An experimental investigation into the response of CCDs to alpha particles is described focused on the relationship between the size of the pixel clusters, the corresponding extent of blooming and the incident alpha particle energy.

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