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An all-chromium single electron transistor: a possible new element of single electronics

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An all-chromium single electron transistor: a possible new element of single electronics. / Kuzmin, L. S.; Pashkin, Yuri; Tavkhelidze, A. N. et al.
In: Applied Physics Letters, Vol. 68, No. 20, 1996.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Kuzmin, LS, Pashkin, Y, Tavkhelidze, AN, Ahlers, F-J, Weimann, T, Quenter, D & Niemeyer, J 1996, 'An all-chromium single electron transistor: a possible new element of single electronics', Applied Physics Letters, vol. 68, no. 20. https://doi.org/10.1063/1.116326

APA

Kuzmin, L. S., Pashkin, Y., Tavkhelidze, A. N., Ahlers, F-J., Weimann, T., Quenter, D., & Niemeyer, J. (1996). An all-chromium single electron transistor: a possible new element of single electronics. Applied Physics Letters, 68(20). https://doi.org/10.1063/1.116326

Vancouver

Kuzmin LS, Pashkin Y, Tavkhelidze AN, Ahlers F-J, Weimann T, Quenter D et al. An all-chromium single electron transistor: a possible new element of single electronics. Applied Physics Letters. 1996;68(20). doi: 10.1063/1.116326

Author

Kuzmin, L. S. ; Pashkin, Yuri ; Tavkhelidze, A. N. et al. / An all-chromium single electron transistor : a possible new element of single electronics. In: Applied Physics Letters. 1996 ; Vol. 68, No. 20.

Bibtex

@article{11baefa6a41a4e509e6c94f599139d62,
title = "An all-chromium single electron transistor: a possible new element of single electronics",
abstract = "The realization of an all‐chromium single electron tunneling (SET) transistor is reported. Chromium was chosen as a normal metal with small grain structure forming the oxide layer with a low potential barrier and great chemical and thermal stability. The transistor showed classical I‐V curves with an offset voltage of 450 μV and an amplitude of gate modulation of 160 μV. Fitting a tunnel current expression in the experimental I‐V curve gave a height of the potential barrier φ=170 meV and a width of the barrier d=16 {\AA}. The SET transistor showed a charge sensitivity of 7×10−4 e/Hz1/2 at 10 Hz.",
author = "Kuzmin, {L. S.} and Yuri Pashkin and Tavkhelidze, {A. N.} and F.-J. Ahlers and T. Weimann and D. Quenter and J. Niemeyer",
year = "1996",
doi = "10.1063/1.116326",
language = "English",
volume = "68",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "20",

}

RIS

TY - JOUR

T1 - An all-chromium single electron transistor

T2 - a possible new element of single electronics

AU - Kuzmin, L. S.

AU - Pashkin, Yuri

AU - Tavkhelidze, A. N.

AU - Ahlers, F.-J.

AU - Weimann, T.

AU - Quenter, D.

AU - Niemeyer, J.

PY - 1996

Y1 - 1996

N2 - The realization of an all‐chromium single electron tunneling (SET) transistor is reported. Chromium was chosen as a normal metal with small grain structure forming the oxide layer with a low potential barrier and great chemical and thermal stability. The transistor showed classical I‐V curves with an offset voltage of 450 μV and an amplitude of gate modulation of 160 μV. Fitting a tunnel current expression in the experimental I‐V curve gave a height of the potential barrier φ=170 meV and a width of the barrier d=16 Å. The SET transistor showed a charge sensitivity of 7×10−4 e/Hz1/2 at 10 Hz.

AB - The realization of an all‐chromium single electron tunneling (SET) transistor is reported. Chromium was chosen as a normal metal with small grain structure forming the oxide layer with a low potential barrier and great chemical and thermal stability. The transistor showed classical I‐V curves with an offset voltage of 450 μV and an amplitude of gate modulation of 160 μV. Fitting a tunnel current expression in the experimental I‐V curve gave a height of the potential barrier φ=170 meV and a width of the barrier d=16 Å. The SET transistor showed a charge sensitivity of 7×10−4 e/Hz1/2 at 10 Hz.

U2 - 10.1063/1.116326

DO - 10.1063/1.116326

M3 - Journal article

VL - 68

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

ER -