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An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots

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An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots. / Qiu, Feng; Qiu, Weiyang; Li, Yulian et al.
In: Nanotechnology, Vol. 27, No. 6, 065602, 12.02.2016.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Qiu, F, Qiu, W, Li, Y, Wang, X, Zhang, Y, Zhou, X, Lv, Y, Sun, Y, Deng, H, Hu, S, Dai, N, Wang, C, Yang, Y, Zhuang, Q, Hayne, M & Krier, A 2016, 'An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots', Nanotechnology, vol. 27, no. 6, 065602. https://doi.org/10.1088/0957-4484/27/6/065602

APA

Qiu, F., Qiu, W., Li, Y., Wang, X., Zhang, Y., Zhou, X., Lv, Y., Sun, Y., Deng, H., Hu, S., Dai, N., Wang, C., Yang, Y., Zhuang, Q., Hayne, M., & Krier, A. (2016). An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots. Nanotechnology, 27(6), Article 065602. https://doi.org/10.1088/0957-4484/27/6/065602

Vancouver

Qiu F, Qiu W, Li Y, Wang X, Zhang Y, Zhou X et al. An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots. Nanotechnology. 2016 Feb 12;27(6):065602. Epub 2015 Dec 18. doi: 10.1088/0957-4484/27/6/065602

Author

Qiu, Feng ; Qiu, Weiyang ; Li, Yulian et al. / An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots. In: Nanotechnology. 2016 ; Vol. 27, No. 6.

Bibtex

@article{2dae9e4bd0844a1d8f1c567766d4c0e0,
title = "An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots",
abstract = "We report the investigation of exciton dynamics in type-II self-assembled GaSb/GaAs quantum dots. The GaSb/GaAs quantum dots (QDs) were grown using a modified liquid phase epitaxy technique. Statistical size distributions of the uncapped QDs were investigated experimentally by field-emission scanning electron microscopy (SEM) and atomic force microscopy (AFM), and theoretically by an eight-band k . p calculation, which demonstrated a dissolution effect. Furthermore, the low-temperature luminescence spectra of type-II GaSb/GaAs QDs with a thick capping layer exhibit well-resolved emission bands and LO-phonon-assisted transitions in the GaSb wetting layer. However, the luminescence lines quench at temperatures above 250 K, which is attributed to the weak quantum confinement of electrons participating in indirect exciton recombination. It was demonstrated that the room temperature stability of the excitons in type-II GaSb/GaAs QDs could be achieved by growing thin a capping layer, which provides strong quantum confinement in the conduction band and enhances the electron-hole Coulomb interaction, stabilizing the excitons.",
keywords = "GaSb quantum dots, liquid phase epitaxy, indirect exciton, weak quantum confinement, LIQUID-PHASE EPITAXY, RECOMBINATION, LOCALIZATION, GROWTH",
author = "Feng Qiu and Weiyang Qiu and Yulian Li and Xingjun Wang and Yun Zhang and Xiaohao Zhou and Yingfei Lv and Yan Sun and Huiyong Deng and Shuhong Hu and Ning Dai and Chong Wang and Yu Yang and Qiandong Zhuang and Manus Hayne and A. Krier",
year = "2016",
month = feb,
day = "12",
doi = "10.1088/0957-4484/27/6/065602",
language = "English",
volume = "27",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "6",

}

RIS

TY - JOUR

T1 - An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots

AU - Qiu, Feng

AU - Qiu, Weiyang

AU - Li, Yulian

AU - Wang, Xingjun

AU - Zhang, Yun

AU - Zhou, Xiaohao

AU - Lv, Yingfei

AU - Sun, Yan

AU - Deng, Huiyong

AU - Hu, Shuhong

AU - Dai, Ning

AU - Wang, Chong

AU - Yang, Yu

AU - Zhuang, Qiandong

AU - Hayne, Manus

AU - Krier, A.

PY - 2016/2/12

Y1 - 2016/2/12

N2 - We report the investigation of exciton dynamics in type-II self-assembled GaSb/GaAs quantum dots. The GaSb/GaAs quantum dots (QDs) were grown using a modified liquid phase epitaxy technique. Statistical size distributions of the uncapped QDs were investigated experimentally by field-emission scanning electron microscopy (SEM) and atomic force microscopy (AFM), and theoretically by an eight-band k . p calculation, which demonstrated a dissolution effect. Furthermore, the low-temperature luminescence spectra of type-II GaSb/GaAs QDs with a thick capping layer exhibit well-resolved emission bands and LO-phonon-assisted transitions in the GaSb wetting layer. However, the luminescence lines quench at temperatures above 250 K, which is attributed to the weak quantum confinement of electrons participating in indirect exciton recombination. It was demonstrated that the room temperature stability of the excitons in type-II GaSb/GaAs QDs could be achieved by growing thin a capping layer, which provides strong quantum confinement in the conduction band and enhances the electron-hole Coulomb interaction, stabilizing the excitons.

AB - We report the investigation of exciton dynamics in type-II self-assembled GaSb/GaAs quantum dots. The GaSb/GaAs quantum dots (QDs) were grown using a modified liquid phase epitaxy technique. Statistical size distributions of the uncapped QDs were investigated experimentally by field-emission scanning electron microscopy (SEM) and atomic force microscopy (AFM), and theoretically by an eight-band k . p calculation, which demonstrated a dissolution effect. Furthermore, the low-temperature luminescence spectra of type-II GaSb/GaAs QDs with a thick capping layer exhibit well-resolved emission bands and LO-phonon-assisted transitions in the GaSb wetting layer. However, the luminescence lines quench at temperatures above 250 K, which is attributed to the weak quantum confinement of electrons participating in indirect exciton recombination. It was demonstrated that the room temperature stability of the excitons in type-II GaSb/GaAs QDs could be achieved by growing thin a capping layer, which provides strong quantum confinement in the conduction band and enhances the electron-hole Coulomb interaction, stabilizing the excitons.

KW - GaSb quantum dots

KW - liquid phase epitaxy

KW - indirect exciton

KW - weak quantum confinement

KW - LIQUID-PHASE EPITAXY

KW - RECOMBINATION

KW - LOCALIZATION

KW - GROWTH

U2 - 10.1088/0957-4484/27/6/065602

DO - 10.1088/0957-4484/27/6/065602

M3 - Journal article

VL - 27

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 6

M1 - 065602

ER -