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An ultrasensitive radio-frequency single-electron transistor working up to 4.2 K

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An ultrasensitive radio-frequency single-electron transistor working up to 4.2 K. / Brenning, Henrik; Kafanov, Sergey; Duty, Tim et al.
In: Journal of Applied Physics, Vol. 100, No. 11, 114321, 2006.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Brenning, H, Kafanov, S, Duty, T, Kubatkin, S & Delsing, P 2006, 'An ultrasensitive radio-frequency single-electron transistor working up to 4.2 K', Journal of Applied Physics, vol. 100, no. 11, 114321. https://doi.org/10.1063/1.2388134

APA

Brenning, H., Kafanov, S., Duty, T., Kubatkin, S., & Delsing, P. (2006). An ultrasensitive radio-frequency single-electron transistor working up to 4.2 K. Journal of Applied Physics, 100(11), Article 114321. https://doi.org/10.1063/1.2388134

Vancouver

Brenning H, Kafanov S, Duty T, Kubatkin S, Delsing P. An ultrasensitive radio-frequency single-electron transistor working up to 4.2 K. Journal of Applied Physics. 2006;100(11):114321. Epub 2006 Dec 13. doi: 10.1063/1.2388134

Author

Brenning, Henrik ; Kafanov, Sergey ; Duty, Tim et al. / An ultrasensitive radio-frequency single-electron transistor working up to 4.2 K. In: Journal of Applied Physics. 2006 ; Vol. 100, No. 11.

Bibtex

@article{5d4bfbc340664b82b25abb8a58601ea7,
title = "An ultrasensitive radio-frequency single-electron transistor working up to 4.2 K",
abstract = "We present the measurement of a radio-frequency single-electron transistor that displays a very high charge sensitivity of 1.9 μe Hz at 4.2 K. At 40 mK, the charge sensitivity is 0.9 and 1.0 μe Hz in the superconducting and normal state, respectively. The sensitivity was measured as a function of radio frequency amplitude at three different temperatures; 40 mK, 1.8, and 4.2 K.",
author = "Henrik Brenning and Sergey Kafanov and Tim Duty and Sergey Kubatkin and Per Delsing",
year = "2006",
doi = "10.1063/1.2388134",
language = "English",
volume = "100",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",
number = "11",

}

RIS

TY - JOUR

T1 - An ultrasensitive radio-frequency single-electron transistor working up to 4.2 K

AU - Brenning, Henrik

AU - Kafanov, Sergey

AU - Duty, Tim

AU - Kubatkin, Sergey

AU - Delsing, Per

PY - 2006

Y1 - 2006

N2 - We present the measurement of a radio-frequency single-electron transistor that displays a very high charge sensitivity of 1.9 μe Hz at 4.2 K. At 40 mK, the charge sensitivity is 0.9 and 1.0 μe Hz in the superconducting and normal state, respectively. The sensitivity was measured as a function of radio frequency amplitude at three different temperatures; 40 mK, 1.8, and 4.2 K.

AB - We present the measurement of a radio-frequency single-electron transistor that displays a very high charge sensitivity of 1.9 μe Hz at 4.2 K. At 40 mK, the charge sensitivity is 0.9 and 1.0 μe Hz in the superconducting and normal state, respectively. The sensitivity was measured as a function of radio frequency amplitude at three different temperatures; 40 mK, 1.8, and 4.2 K.

U2 - 10.1063/1.2388134

DO - 10.1063/1.2388134

M3 - Journal article

AN - SCOPUS:33845757173

VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

M1 - 114321

ER -