Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Anisotropy of Spin Splitting and Spin Relaxation in Lateral Quantum Dots
AU - Falko, Vladimir I.
AU - Altshuler, B. L.
AU - Tsyplyatyev, O.
N1 - Our prediction that inelastic spin relaxation and spin splitting in lateral GaAs/AlGaAs quantum dots have a nonlinear magnetic field dependence and pronounced anisotropy (with respect to the in-plane orientation of a magnetic field) resulted in a collaboration with Marcus at Harvard. RAE_import_type : Journal article RAE_uoa_type : Physics
PY - 2005/8/12
Y1 - 2005/8/12
N2 - Inelastic spin relaxation and spin splitting s in lateral quantum dots are studied in the regime of strong in-plane magnetic field. Because of both the g-factor energy dependence and spin-orbit coupling, s demonstrates a substantial nonlinear magnetic field dependence similar to that observed by Hanson et al. [Phys. Rev. Lett. 91, 196802 (2003)]. It also varies with the in-plane orientation of the magnetic field due to crystalline anisotropy of the spin-orbit coupling. The spin relaxation rate is also anisotropic, the anisotropy increasing with the field. When the magnetic length is less than the "thickness" of the GaAs dot, the relaxation can be an order of magnitude faster for B||[100] than for B||[110].
AB - Inelastic spin relaxation and spin splitting s in lateral quantum dots are studied in the regime of strong in-plane magnetic field. Because of both the g-factor energy dependence and spin-orbit coupling, s demonstrates a substantial nonlinear magnetic field dependence similar to that observed by Hanson et al. [Phys. Rev. Lett. 91, 196802 (2003)]. It also varies with the in-plane orientation of the magnetic field due to crystalline anisotropy of the spin-orbit coupling. The spin relaxation rate is also anisotropic, the anisotropy increasing with the field. When the magnetic length is less than the "thickness" of the GaAs dot, the relaxation can be an order of magnitude faster for B||[100] than for B||[110].
KW - semiconductor quantum dots
KW - III-V semiconductors
KW - gallium arsenide
KW - g-factor
KW - spin-orbit interactions
KW - magnetoelectronics
U2 - 10.1103/PhysRevLett.95.076603
DO - 10.1103/PhysRevLett.95.076603
M3 - Journal article
VL - 95
JO - Physical review letters
JF - Physical review letters
SN - 1079-7114
IS - 7
M1 - 076603
ER -