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    Rights statement: This is the peer reviewed version of the following article:Buckley, D., Kudrynskyi, Z. R., Balakrishnan, N., Vincent, T., Mazumder, D., Castanon, E., Kovalyuk, Z. D., Kolosov, O., Kazakova, O., Tzalenchuk, A., Patanè, A., Anomalous Low Thermal Conductivity of Atomically Thin InSe Probed by Scanning Thermal Microscopy. Adv. Funct. Mater. 2021, 2008967. https://doi.org/10.1002/adfm.202008967 which has been published in final form at https://onlinelibrary.wiley.com/doi/10.1002/adfm.202008967 This article may be used for non-commercial purposes in accordance With Wiley Terms and Conditions for self-archiving.

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Anomalous Low Thermal Conductivity of Atomically Thin InSe Probed by Scanning Thermal Microscopy

Research output: Contribution to journalJournal articlepeer-review

Published
  • David Buckley
  • Zakhar Kudrynskyi
  • Nilanthy Balakrishnan
  • Tom Vincent
  • Debarati Mazumder
  • Eli Castanon
  • Zakhar Kovalyuk
  • Oleg Kolosov
  • Olga Kazakova
  • A. Tzalenchuk
  • Amalia Patane
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Article number2008967
<mark>Journal publication date</mark>10/03/2021
<mark>Journal</mark>Advanced Functional Materials
Issue number11
Volume31
Number of pages10
Publication StatusPublished
Early online date12/01/21
<mark>Original language</mark>English

Abstract

The ability of a material to conduct heat influences many physical phenomena, ranging from thermal management in nanoscale devices to thermoelectrics. Van der Waals 2D materials offer a versatile platform to tailor heat transfer due to their high surface-to-volume ratio and mechanical flexibility. Here, the nanoscale thermal properties of 2D indium selenide (InSe) are studied by scanning thermal microscopy. The high electrical conductivity, broad-band optical absorption, and mechanical flexibility of 2D InSe are accompanied by an anomalous low thermal conductivity (κ). This can be smaller than that of low-κ dielectrics, such as silicon oxide, and it decreases with reducing the lateral size and/or thickness of InSe. The thermal response is probed in free-standing InSe layers as well as layers supported by a substrate, revealing the role of interfacial thermal resistance, phonon scattering, and strain. These thermal properties are critical for future emerging technologies, such as field-effect transistors that require efficient heat dissipation or thermoelectric energy conversion with low-κ, high electron mobility 2D materials, such as InSe.

Bibliographic note

This is the peer reviewed version of the following article:Buckley, D., Kudrynskyi, Z. R., Balakrishnan, N., Vincent, T., Mazumder, D., Castanon, E., Kovalyuk, Z. D., Kolosov, O., Kazakova, O., Tzalenchuk, A., Patanè, A., Anomalous Low Thermal Conductivity of Atomically Thin InSe Probed by Scanning Thermal Microscopy. Adv. Funct. Mater. 2021, 2008967. https://doi.org/10.1002/adfm.202008967 which has been published in final form at https://onlinelibrary.wiley.com/doi/10.1002/adfm.202008967 This article may be used for non-commercial purposes in accordance With Wiley Terms and Conditions for self-archiving.