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Application of low temperature scanning electron microscopy for the investigation of single-electron tunneling circuits

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Application of low temperature scanning electron microscopy for the investigation of single-electron tunneling circuits. / Ustinov, A. V.; Lemke, S.; Doderer, T. et al.
In: Journal of Applied Physics, Vol. 76, No. 1, 01.12.1994, p. 376-384.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Ustinov, AV, Lemke, S, Doderer, T, Huebener, RP, Kuzmin, LS & Pashkin, YA 1994, 'Application of low temperature scanning electron microscopy for the investigation of single-electron tunneling circuits', Journal of Applied Physics, vol. 76, no. 1, pp. 376-384. https://doi.org/10.1063/1.357084

APA

Ustinov, A. V., Lemke, S., Doderer, T., Huebener, R. P., Kuzmin, L. S., & Pashkin, Y. A. (1994). Application of low temperature scanning electron microscopy for the investigation of single-electron tunneling circuits. Journal of Applied Physics, 76(1), 376-384. https://doi.org/10.1063/1.357084

Vancouver

Ustinov AV, Lemke S, Doderer T, Huebener RP, Kuzmin LS, Pashkin YA. Application of low temperature scanning electron microscopy for the investigation of single-electron tunneling circuits. Journal of Applied Physics. 1994 Dec 1;76(1):376-384. doi: 10.1063/1.357084

Author

Ustinov, A. V. ; Lemke, S. ; Doderer, T. et al. / Application of low temperature scanning electron microscopy for the investigation of single-electron tunneling circuits. In: Journal of Applied Physics. 1994 ; Vol. 76, No. 1. pp. 376-384.

Bibtex

@article{e099d132d05a47d6a3ffd9464c92383e,
title = "Application of low temperature scanning electron microscopy for the investigation of single-electron tunneling circuits",
abstract = "We present the first experimental results on a spatially-resolved investigation of a SET (single-electron tunneling) circuit using the method of low temperature scanning electron microscopy. The new technique can be operated with short electron beam pulses down to 1 μs and small beam current below 1 pA, which gives the value of the charge per pulse as low as one elementary charge. By recording the circuit voltage response to the modulated electron beam irradiation as a function of the beam coordinates on the circuit, we were able to image the potentials of different parts of the circuit. For a SET-transistor which displayed the Coulomb blockade we found evidence of memory-effects due to charge trapping in the vicinity of one of the junctions. Further possible applications of our method for the spatially resolved study of single-electron circuits are suggested.",
author = "Ustinov, {A. V.} and S. Lemke and T. Doderer and Huebener, {R. P.} and Kuzmin, {L. S.} and Pashkin, {Yu A.}",
year = "1994",
month = dec,
day = "1",
doi = "10.1063/1.357084",
language = "English",
volume = "76",
pages = "376--384",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",
number = "1",

}

RIS

TY - JOUR

T1 - Application of low temperature scanning electron microscopy for the investigation of single-electron tunneling circuits

AU - Ustinov, A. V.

AU - Lemke, S.

AU - Doderer, T.

AU - Huebener, R. P.

AU - Kuzmin, L. S.

AU - Pashkin, Yu A.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - We present the first experimental results on a spatially-resolved investigation of a SET (single-electron tunneling) circuit using the method of low temperature scanning electron microscopy. The new technique can be operated with short electron beam pulses down to 1 μs and small beam current below 1 pA, which gives the value of the charge per pulse as low as one elementary charge. By recording the circuit voltage response to the modulated electron beam irradiation as a function of the beam coordinates on the circuit, we were able to image the potentials of different parts of the circuit. For a SET-transistor which displayed the Coulomb blockade we found evidence of memory-effects due to charge trapping in the vicinity of one of the junctions. Further possible applications of our method for the spatially resolved study of single-electron circuits are suggested.

AB - We present the first experimental results on a spatially-resolved investigation of a SET (single-electron tunneling) circuit using the method of low temperature scanning electron microscopy. The new technique can be operated with short electron beam pulses down to 1 μs and small beam current below 1 pA, which gives the value of the charge per pulse as low as one elementary charge. By recording the circuit voltage response to the modulated electron beam irradiation as a function of the beam coordinates on the circuit, we were able to image the potentials of different parts of the circuit. For a SET-transistor which displayed the Coulomb blockade we found evidence of memory-effects due to charge trapping in the vicinity of one of the junctions. Further possible applications of our method for the spatially resolved study of single-electron circuits are suggested.

U2 - 10.1063/1.357084

DO - 10.1063/1.357084

M3 - Journal article

AN - SCOPUS:1542498075

VL - 76

SP - 376

EP - 384

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 1

ER -