Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Application of low temperature scanning electron microscopy for the investigation of single-electron tunneling circuits
AU - Ustinov, A. V.
AU - Lemke, S.
AU - Doderer, T.
AU - Huebener, R. P.
AU - Kuzmin, L. S.
AU - Pashkin, Yu A.
PY - 1994/12/1
Y1 - 1994/12/1
N2 - We present the first experimental results on a spatially-resolved investigation of a SET (single-electron tunneling) circuit using the method of low temperature scanning electron microscopy. The new technique can be operated with short electron beam pulses down to 1 μs and small beam current below 1 pA, which gives the value of the charge per pulse as low as one elementary charge. By recording the circuit voltage response to the modulated electron beam irradiation as a function of the beam coordinates on the circuit, we were able to image the potentials of different parts of the circuit. For a SET-transistor which displayed the Coulomb blockade we found evidence of memory-effects due to charge trapping in the vicinity of one of the junctions. Further possible applications of our method for the spatially resolved study of single-electron circuits are suggested.
AB - We present the first experimental results on a spatially-resolved investigation of a SET (single-electron tunneling) circuit using the method of low temperature scanning electron microscopy. The new technique can be operated with short electron beam pulses down to 1 μs and small beam current below 1 pA, which gives the value of the charge per pulse as low as one elementary charge. By recording the circuit voltage response to the modulated electron beam irradiation as a function of the beam coordinates on the circuit, we were able to image the potentials of different parts of the circuit. For a SET-transistor which displayed the Coulomb blockade we found evidence of memory-effects due to charge trapping in the vicinity of one of the junctions. Further possible applications of our method for the spatially resolved study of single-electron circuits are suggested.
U2 - 10.1063/1.357084
DO - 10.1063/1.357084
M3 - Journal article
AN - SCOPUS:1542498075
VL - 76
SP - 376
EP - 384
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 1
ER -