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Arsenic/phosphorus exchange and wavelength tuning of in situ annealed InAs/InP quantum dot superlattice

Research output: Contribution to Journal/MagazineJournal articlepeer-review

<mark>Journal publication date</mark>2001
<mark>Journal</mark>Solid State Communications
Issue number8
Number of pages5
Pages (from-to)465-469
Publication StatusPublished
<mark>Original language</mark>English


We report the solid-source molecular beam epitaxial (SSMBE) growth of InAs/InP quantum dots (QDs) superlattices and the effect of As/P exchange. The InAs QDs were found to have an average lateral diameter of ~40nm and density of 3 to 4x1010cm-2. The single-layer QDs have photoluminescence (PL) emission centred at 0.78eV with a linewidth of 64meV at low temperature (4K). Double-crystal X-ray diffraction (DCXRD) spectra showed evidence of significant As/P exchange during in situ annealing under P2 pressure before growing the spacer layer. An average P composition of ~30% in the resulting InAsP QDs in samples annealed for 50s was deduced from dynamical simulations of the experimental DCXRD spectra. The QDs superlattice PL emission exhibits a blueshift with increase of annealing time, and emission at 1.55m at 300K was achieved. This observation holds promise for possible telecommunication device applications at long wavelength.