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Carbon nanotube capacitance model in degenerate and nondegenerate regimes

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Carbon nanotube capacitance model in degenerate and nondegenerate regimes. / Ahmadi, M. T.; Webb, J. F.; Amin, N. A. et al.
In: AIP Conference Proceedings, Vol. 1337, 20.06.2011, p. 173-176.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Ahmadi, MT, Webb, JF, Amin, NA, Mousavi, SM, Sadeghi, H, Neilchiyan, MR & Ismail, R 2011, 'Carbon nanotube capacitance model in degenerate and nondegenerate regimes', AIP Conference Proceedings, vol. 1337, pp. 173-176. https://doi.org/10.1063/1.3592461

APA

Ahmadi, M. T., Webb, J. F., Amin, N. A., Mousavi, S. M., Sadeghi, H., Neilchiyan, M. R., & Ismail, R. (2011). Carbon nanotube capacitance model in degenerate and nondegenerate regimes. AIP Conference Proceedings, 1337, 173-176. https://doi.org/10.1063/1.3592461

Vancouver

Ahmadi MT, Webb JF, Amin NA, Mousavi SM, Sadeghi H, Neilchiyan MR et al. Carbon nanotube capacitance model in degenerate and nondegenerate regimes. AIP Conference Proceedings. 2011 Jun 20;1337:173-176. doi: 10.1063/1.3592461

Author

Ahmadi, M. T. ; Webb, J. F. ; Amin, N. A. et al. / Carbon nanotube capacitance model in degenerate and nondegenerate regimes. In: AIP Conference Proceedings. 2011 ; Vol. 1337. pp. 173-176.

Bibtex

@article{20143878ad4745e2bebb049a050a607a,
title = "Carbon nanotube capacitance model in degenerate and nondegenerate regimes",
abstract = "In this work, fundamental results on carrier statistics in a carbon nanotube treated as a one-dimensional material are presented. Also the effect of degeneracy on the capacitance of the carbon nanotube channel in a carbon nanotube field effect transistor is discussed. A quantum capacitance as well as a classical capacitance is revealed. Furthermore it is shown that for low gate voltage, the total capacitance is equivalent to the classical capacitance but for high gate voltage it is equivalent to the quantum capacitance. We predict that in the nondegenerate regime, the total capacitance is equivalent to the classical capacitance and that the quantum capacitance can be neglected, whereas only quantum capacitance needs to be taken into account in the calculation of the total capacitance in the degenerate regime.",
keywords = "Carbon nanotubes, quantum capacitance, degenerate, nondegenerate, field effect transistor, INAS QUANTUM DOTS, VOLTAGE PROFILE, SPECTROSCOPY, PHYSICS",
author = "Ahmadi, {M. T.} and Webb, {J. F.} and Amin, {N. A.} and Mousavi, {S. M.} and Hatef Sadeghi and Neilchiyan, {M. R.} and Razi Ismail",
year = "2011",
month = jun,
day = "20",
doi = "10.1063/1.3592461",
language = "English",
volume = "1337",
pages = "173--176",
journal = "AIP Conference Proceedings",
issn = "0094-243X",
publisher = "American Institute of Physics Publising LLC",
note = "4th Global Conference on Power Control and Optimization ; Conference date: 02-12-2010 Through 04-12-2010",

}

RIS

TY - JOUR

T1 - Carbon nanotube capacitance model in degenerate and nondegenerate regimes

AU - Ahmadi, M. T.

AU - Webb, J. F.

AU - Amin, N. A.

AU - Mousavi, S. M.

AU - Sadeghi, Hatef

AU - Neilchiyan, M. R.

AU - Ismail, Razi

PY - 2011/6/20

Y1 - 2011/6/20

N2 - In this work, fundamental results on carrier statistics in a carbon nanotube treated as a one-dimensional material are presented. Also the effect of degeneracy on the capacitance of the carbon nanotube channel in a carbon nanotube field effect transistor is discussed. A quantum capacitance as well as a classical capacitance is revealed. Furthermore it is shown that for low gate voltage, the total capacitance is equivalent to the classical capacitance but for high gate voltage it is equivalent to the quantum capacitance. We predict that in the nondegenerate regime, the total capacitance is equivalent to the classical capacitance and that the quantum capacitance can be neglected, whereas only quantum capacitance needs to be taken into account in the calculation of the total capacitance in the degenerate regime.

AB - In this work, fundamental results on carrier statistics in a carbon nanotube treated as a one-dimensional material are presented. Also the effect of degeneracy on the capacitance of the carbon nanotube channel in a carbon nanotube field effect transistor is discussed. A quantum capacitance as well as a classical capacitance is revealed. Furthermore it is shown that for low gate voltage, the total capacitance is equivalent to the classical capacitance but for high gate voltage it is equivalent to the quantum capacitance. We predict that in the nondegenerate regime, the total capacitance is equivalent to the classical capacitance and that the quantum capacitance can be neglected, whereas only quantum capacitance needs to be taken into account in the calculation of the total capacitance in the degenerate regime.

KW - Carbon nanotubes

KW - quantum capacitance

KW - degenerate

KW - nondegenerate

KW - field effect transistor

KW - INAS QUANTUM DOTS

KW - VOLTAGE PROFILE

KW - SPECTROSCOPY

KW - PHYSICS

U2 - 10.1063/1.3592461

DO - 10.1063/1.3592461

M3 - Journal article

VL - 1337

SP - 173

EP - 176

JO - AIP Conference Proceedings

JF - AIP Conference Proceedings

SN - 0094-243X

T2 - 4th Global Conference on Power Control and Optimization

Y2 - 2 December 2010 through 4 December 2010

ER -