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Channel conductance of ABA stacking trilayer graphene nanoribbon field-effect transistor

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Channel conductance of ABA stacking trilayer graphene nanoribbon field-effect transistor. / Sadeghi, Hatef; Ahmadi, M. T.; Mousavi, S. M. et al.
In: Modern Physics Letters B, Vol. 26, No. 8, 1250047, 30.03.2012.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Sadeghi, H, Ahmadi, MT, Mousavi, SM & Ismail, R 2012, 'Channel conductance of ABA stacking trilayer graphene nanoribbon field-effect transistor', Modern Physics Letters B, vol. 26, no. 8, 1250047. https://doi.org/10.1142/S0217984912500479

APA

Sadeghi, H., Ahmadi, M. T., Mousavi, S. M., & Ismail, R. (2012). Channel conductance of ABA stacking trilayer graphene nanoribbon field-effect transistor. Modern Physics Letters B, 26(8), Article 1250047. https://doi.org/10.1142/S0217984912500479

Vancouver

Sadeghi H, Ahmadi MT, Mousavi SM, Ismail R. Channel conductance of ABA stacking trilayer graphene nanoribbon field-effect transistor. Modern Physics Letters B. 2012 Mar 30;26(8):1250047. doi: 10.1142/S0217984912500479

Author

Sadeghi, Hatef ; Ahmadi, M. T. ; Mousavi, S. M. et al. / Channel conductance of ABA stacking trilayer graphene nanoribbon field-effect transistor. In: Modern Physics Letters B. 2012 ; Vol. 26, No. 8.

Bibtex

@article{5f718c4c49a54767833371c8ab389605,
title = "Channel conductance of ABA stacking trilayer graphene nanoribbon field-effect transistor",
abstract = "In this paper, our focus is on ABA trilayer graphene nanoribbon (TGN), in which the middle layer is horizontally shifted from the top and bottom layers. The conductance model of TGN as a FET channel is presented based on Landauer formula. Besides the good reported agreement with experimental study lending support to our model, the presented model demonstrates that minimum conductivity increases dramatically by temperature. It also draws parallels between TGN and bilayer graphene nanoribbon, in which similar thermal behavior is observed. Maxwell-Boltzmann approximation is employed to form the conductance of TGN near the neutrality point. Analytical model in degenerate regime in comparison with reported data proves that TGN-based transistor will operate in degenerate regime like what we expect in conventional semiconductors. Moreover, our model confirms that in similar condition, the conductivity of TGN is less than bilayer graphene nanoribbon as reported in some experiments.",
keywords = "Conductance, trilayer graphene, model, bilayer graphene, FET, EPITAXIAL GRAPHENE, BILAYER",
author = "Hatef Sadeghi and Ahmadi, {M. T.} and Mousavi, {S. M.} and Razali Ismail",
year = "2012",
month = mar,
day = "30",
doi = "10.1142/S0217984912500479",
language = "English",
volume = "26",
journal = "Modern Physics Letters B",
issn = "0217-9849",
publisher = "World Scientific Publishing Co. Pte Ltd",
number = "8",

}

RIS

TY - JOUR

T1 - Channel conductance of ABA stacking trilayer graphene nanoribbon field-effect transistor

AU - Sadeghi, Hatef

AU - Ahmadi, M. T.

AU - Mousavi, S. M.

AU - Ismail, Razali

PY - 2012/3/30

Y1 - 2012/3/30

N2 - In this paper, our focus is on ABA trilayer graphene nanoribbon (TGN), in which the middle layer is horizontally shifted from the top and bottom layers. The conductance model of TGN as a FET channel is presented based on Landauer formula. Besides the good reported agreement with experimental study lending support to our model, the presented model demonstrates that minimum conductivity increases dramatically by temperature. It also draws parallels between TGN and bilayer graphene nanoribbon, in which similar thermal behavior is observed. Maxwell-Boltzmann approximation is employed to form the conductance of TGN near the neutrality point. Analytical model in degenerate regime in comparison with reported data proves that TGN-based transistor will operate in degenerate regime like what we expect in conventional semiconductors. Moreover, our model confirms that in similar condition, the conductivity of TGN is less than bilayer graphene nanoribbon as reported in some experiments.

AB - In this paper, our focus is on ABA trilayer graphene nanoribbon (TGN), in which the middle layer is horizontally shifted from the top and bottom layers. The conductance model of TGN as a FET channel is presented based on Landauer formula. Besides the good reported agreement with experimental study lending support to our model, the presented model demonstrates that minimum conductivity increases dramatically by temperature. It also draws parallels between TGN and bilayer graphene nanoribbon, in which similar thermal behavior is observed. Maxwell-Boltzmann approximation is employed to form the conductance of TGN near the neutrality point. Analytical model in degenerate regime in comparison with reported data proves that TGN-based transistor will operate in degenerate regime like what we expect in conventional semiconductors. Moreover, our model confirms that in similar condition, the conductivity of TGN is less than bilayer graphene nanoribbon as reported in some experiments.

KW - Conductance

KW - trilayer graphene

KW - model

KW - bilayer graphene

KW - FET

KW - EPITAXIAL GRAPHENE

KW - BILAYER

U2 - 10.1142/S0217984912500479

DO - 10.1142/S0217984912500479

M3 - Journal article

VL - 26

JO - Modern Physics Letters B

JF - Modern Physics Letters B

SN - 0217-9849

IS - 8

M1 - 1250047

ER -