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Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices

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Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices. / Garduno-Nolasco, Edson; Carrington, Peter James; Krier, Anthony et al.
In: IET Optoelectronics, Vol. 8, No. 2, 04.2014, p. 71-75.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Garduno-Nolasco, E, Carrington, PJ, Krier, A & Missous, M 2014, 'Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices', IET Optoelectronics, vol. 8, no. 2, pp. 71-75. https://doi.org/10.1049/iet-opt.2013.0056

APA

Garduno-Nolasco, E., Carrington, P. J., Krier, A., & Missous, M. (2014). Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices. IET Optoelectronics, 8(2), 71-75. https://doi.org/10.1049/iet-opt.2013.0056

Vancouver

Garduno-Nolasco E, Carrington PJ, Krier A, Missous M. Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices. IET Optoelectronics. 2014 Apr;8(2):71-75. Epub 2014 Feb 25. doi: 10.1049/iet-opt.2013.0056

Author

Garduno-Nolasco, Edson ; Carrington, Peter James ; Krier, Anthony et al. / Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices. In: IET Optoelectronics. 2014 ; Vol. 8, No. 2. pp. 71-75.

Bibtex

@article{896c269e687c4731ae4bd49b6ae3b9fe,
title = "Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices",
abstract = "The authors report on the structural, the optical and the electrical properties of solar cells containing 20 layers of doped InAs/GaAs quantum dots (QDs). The structures were grown by molecular beam epitaxy and contain n dopant sheet densities of 8 and 16 × 1010cm−2, respectively, in between the QD layers. Under a 1 sun illumination, the open-circuit voltage (V oc) and the efficiency of the 8 × 1010cm−2 n-doped sample were increased to values of 0.73 V and 9.7%, respectively, compared with a reference undoped sample (a V oc of 0.70 V and an efficiency of 9.0%). However, the short-circuit current density (J sc) decreased from 20.1 to 17.4 mA/cm2 indicating bandfilling within the QD array.",
author = "Edson Garduno-Nolasco and Carrington, {Peter James} and Anthony Krier and Mohamed Missous",
year = "2014",
month = apr,
doi = "10.1049/iet-opt.2013.0056",
language = "English",
volume = "8",
pages = "71--75",
journal = "IET Optoelectronics",
issn = "1751-8768",
publisher = "Institution of Engineering and Technology",
number = "2",

}

RIS

TY - JOUR

T1 - Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices

AU - Garduno-Nolasco, Edson

AU - Carrington, Peter James

AU - Krier, Anthony

AU - Missous, Mohamed

PY - 2014/4

Y1 - 2014/4

N2 - The authors report on the structural, the optical and the electrical properties of solar cells containing 20 layers of doped InAs/GaAs quantum dots (QDs). The structures were grown by molecular beam epitaxy and contain n dopant sheet densities of 8 and 16 × 1010cm−2, respectively, in between the QD layers. Under a 1 sun illumination, the open-circuit voltage (V oc) and the efficiency of the 8 × 1010cm−2 n-doped sample were increased to values of 0.73 V and 9.7%, respectively, compared with a reference undoped sample (a V oc of 0.70 V and an efficiency of 9.0%). However, the short-circuit current density (J sc) decreased from 20.1 to 17.4 mA/cm2 indicating bandfilling within the QD array.

AB - The authors report on the structural, the optical and the electrical properties of solar cells containing 20 layers of doped InAs/GaAs quantum dots (QDs). The structures were grown by molecular beam epitaxy and contain n dopant sheet densities of 8 and 16 × 1010cm−2, respectively, in between the QD layers. Under a 1 sun illumination, the open-circuit voltage (V oc) and the efficiency of the 8 × 1010cm−2 n-doped sample were increased to values of 0.73 V and 9.7%, respectively, compared with a reference undoped sample (a V oc of 0.70 V and an efficiency of 9.0%). However, the short-circuit current density (J sc) decreased from 20.1 to 17.4 mA/cm2 indicating bandfilling within the QD array.

U2 - 10.1049/iet-opt.2013.0056

DO - 10.1049/iet-opt.2013.0056

M3 - Journal article

VL - 8

SP - 71

EP - 75

JO - IET Optoelectronics

JF - IET Optoelectronics

SN - 1751-8768

IS - 2

ER -