Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
| Publication date | 2001 |
|---|---|
| Host publication | Microscopy of Semiconducting Materials 2001 |
| Editors | A. G. Cullis, J. L. Hutchison |
| Place of Publication | Bristol |
| Publisher | IOP Publishing Ltd |
| Pages | 531-534 |
| Number of pages | 4 |
| ISBN (print) | 0-7503-0818-4 |
| <mark>Original language</mark> | English |
| Event | Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials - OXFORD Duration: 25/03/2001 → 29/03/2001 |
| Conference | Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials |
|---|---|
| City | OXFORD |
| Period | 25/03/01 → 29/03/01 |
| Conference | Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials |
|---|---|
| City | OXFORD |
| Period | 25/03/01 → 29/03/01 |
Ultrasonic Force Microscopy (UFM) has been applied to detect the mechanical compliance of semiconductors at the nanometer (nm) scale. UFM of Si and SiGe heterostructures reveals a sensitivity to 2.5 nm thin films. Structures and damage generated during implantation and milling of Si with a focused ion beam are also characterized. This provides novel insight into the topographic and mechanical consequences of ion implantation for doses down to 10(14) ions/cm(2). The experimental results for both SiGe films and ion milled Si wafers are supported by simulations of the UFM technique.