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Characteristic jump in the electrical properties of a Pd/AlN/Si-based device on exposure to hydrogen.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Characteristic jump in the electrical properties of a Pd/AlN/Si-based device on exposure to hydrogen. / Thakur, J. S.; Prakasam, H. E.; Zhang, Linfeng et al.
In: Physical review B, Vol. 75, 06.02.2007, p. 75308.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Thakur, JS, Prakasam, HE, Zhang, L, McCullen, EF, Rimai, L, García-Suárez, VM, Naik, R, Ng, KYS & Auner, GW 2007, 'Characteristic jump in the electrical properties of a Pd/AlN/Si-based device on exposure to hydrogen.', Physical review B, vol. 75, pp. 75308. https://doi.org/10.1103/PhysRevB.75.075308

APA

Thakur, J. S., Prakasam, H. E., Zhang, L., McCullen, E. F., Rimai, L., García-Suárez, V. M., Naik, R., Ng, K. Y. S., & Auner, G. W. (2007). Characteristic jump in the electrical properties of a Pd/AlN/Si-based device on exposure to hydrogen. Physical review B, 75, 75308. https://doi.org/10.1103/PhysRevB.75.075308

Vancouver

Thakur JS, Prakasam HE, Zhang L, McCullen EF, Rimai L, García-Suárez VM et al. Characteristic jump in the electrical properties of a Pd/AlN/Si-based device on exposure to hydrogen. Physical review B. 2007 Feb 6;75:75308. doi: 10.1103/PhysRevB.75.075308

Author

Thakur, J. S. ; Prakasam, H. E. ; Zhang, Linfeng et al. / Characteristic jump in the electrical properties of a Pd/AlN/Si-based device on exposure to hydrogen. In: Physical review B. 2007 ; Vol. 75. pp. 75308.

Bibtex

@article{eac5fcf0dfca4ea5a224d324df6faa5e,
title = "Characteristic jump in the electrical properties of a Pd/AlN/Si-based device on exposure to hydrogen.",
abstract = "The time-dependant current response of Pd/AlN/Si-based devices is investigated for different hydrogen concentrations. At a fixed applied voltage, the device current suddenly increases when hydrogen gas is turned on and the magnitude of this current shift varies with the hydrogen concentrations. Using first-principles simulations, the electronic structure of the Pd with different hydrogen concentrations in tetrahedric and octahedric positions is calculated. We find that when hydrogen loads the Pd metal, its Fermi energy changes, which affects the Fermi level of the Pd/AlN/Si device and thus its electrical response.",
author = "Thakur, {J. S.} and Prakasam, {H. E.} and Linfeng Zhang and McCullen, {E. F.} and L. Rimai and Garc{\'i}a-Su{\'a}rez, {Victor M.} and R. Naik and Ng, {K. Y. S.} and Auner, {G. W.}",
year = "2007",
month = feb,
day = "6",
doi = "10.1103/PhysRevB.75.075308",
language = "English",
volume = "75",
pages = "75308",
journal = "Physical review B",
issn = "1550-235X",
publisher = "AMER PHYSICAL SOC",

}

RIS

TY - JOUR

T1 - Characteristic jump in the electrical properties of a Pd/AlN/Si-based device on exposure to hydrogen.

AU - Thakur, J. S.

AU - Prakasam, H. E.

AU - Zhang, Linfeng

AU - McCullen, E. F.

AU - Rimai, L.

AU - García-Suárez, Victor M.

AU - Naik, R.

AU - Ng, K. Y. S.

AU - Auner, G. W.

PY - 2007/2/6

Y1 - 2007/2/6

N2 - The time-dependant current response of Pd/AlN/Si-based devices is investigated for different hydrogen concentrations. At a fixed applied voltage, the device current suddenly increases when hydrogen gas is turned on and the magnitude of this current shift varies with the hydrogen concentrations. Using first-principles simulations, the electronic structure of the Pd with different hydrogen concentrations in tetrahedric and octahedric positions is calculated. We find that when hydrogen loads the Pd metal, its Fermi energy changes, which affects the Fermi level of the Pd/AlN/Si device and thus its electrical response.

AB - The time-dependant current response of Pd/AlN/Si-based devices is investigated for different hydrogen concentrations. At a fixed applied voltage, the device current suddenly increases when hydrogen gas is turned on and the magnitude of this current shift varies with the hydrogen concentrations. Using first-principles simulations, the electronic structure of the Pd with different hydrogen concentrations in tetrahedric and octahedric positions is calculated. We find that when hydrogen loads the Pd metal, its Fermi energy changes, which affects the Fermi level of the Pd/AlN/Si device and thus its electrical response.

U2 - 10.1103/PhysRevB.75.075308

DO - 10.1103/PhysRevB.75.075308

M3 - Journal article

VL - 75

SP - 75308

JO - Physical review B

JF - Physical review B

SN - 1550-235X

ER -