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Characterization of all-Nb nanodevices fabricated by electron beam lithography and ion beam oxidation

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Characterization of all-Nb nanodevices fabricated by electron beam lithography and ion beam oxidation. / Im, Hyunsik; Pashkin, Yuri; Yamamoto, T. et al.
In: Journal of Vacuum Science and Technology B, Vol. 25, No. 2, 448, 03.2007.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Im, H, Pashkin, Y, Yamamoto, T, Astafiev, OV, Nakamura, Y & Tsai, J-S 2007, 'Characterization of all-Nb nanodevices fabricated by electron beam lithography and ion beam oxidation', Journal of Vacuum Science and Technology B, vol. 25, no. 2, 448. https://doi.org/10.1116/1.2715971

APA

Im, H., Pashkin, Y., Yamamoto, T., Astafiev, O. V., Nakamura, Y., & Tsai, J-S. (2007). Characterization of all-Nb nanodevices fabricated by electron beam lithography and ion beam oxidation. Journal of Vacuum Science and Technology B, 25(2), Article 448. https://doi.org/10.1116/1.2715971

Vancouver

Im H, Pashkin Y, Yamamoto T, Astafiev OV, Nakamura Y, Tsai J-S. Characterization of all-Nb nanodevices fabricated by electron beam lithography and ion beam oxidation. Journal of Vacuum Science and Technology B. 2007 Mar;25(2):448. doi: 10.1116/1.2715971

Author

Im, Hyunsik ; Pashkin, Yuri ; Yamamoto, T. et al. / Characterization of all-Nb nanodevices fabricated by electron beam lithography and ion beam oxidation. In: Journal of Vacuum Science and Technology B. 2007 ; Vol. 25, No. 2.

Bibtex

@article{1f46eee24f4d4af8a871a0ff703ff35d,
title = "Characterization of all-Nb nanodevices fabricated by electron beam lithography and ion beam oxidation",
abstract = "The authors present a reliable process that allows them to fabricate all-niobium nanodevices in a reproducible and well controlled way. Deposition of niobium thin films is done through a suspended mask formed in a Ge layer supported by a thermally stable polymer called phenylene-ether-sulfone, while the tunnel barrier is formed by ion beam oxidation of Nb surface. They study the effect of the fabrication conditions on the quality of narrow Nb stripes by measuring their transition temperature. Using dc transport measurements, they characterize tunnel junctions as well as single-electron transistors (SETs) and extract basic junction parameters, such as the barrier height, width, and specific capacitance. Low-frequency charge noise of all-Nb SETs at 50mK50mK has a 1∕f1∕f power spectrum and the value of ∼4×10−3e/Hz1∕2∼4×10−3e∕Hz1∕2 at 1Hz1Hz.",
author = "Hyunsik Im and Yuri Pashkin and T. Yamamoto and Astafiev, {O. V.} and Y. Nakamura and Jaw-Shen Tsai",
year = "2007",
month = mar,
doi = "10.1116/1.2715971",
language = "English",
volume = "25",
journal = "Journal of Vacuum Science and Technology B",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "2",

}

RIS

TY - JOUR

T1 - Characterization of all-Nb nanodevices fabricated by electron beam lithography and ion beam oxidation

AU - Im, Hyunsik

AU - Pashkin, Yuri

AU - Yamamoto, T.

AU - Astafiev, O. V.

AU - Nakamura, Y.

AU - Tsai, Jaw-Shen

PY - 2007/3

Y1 - 2007/3

N2 - The authors present a reliable process that allows them to fabricate all-niobium nanodevices in a reproducible and well controlled way. Deposition of niobium thin films is done through a suspended mask formed in a Ge layer supported by a thermally stable polymer called phenylene-ether-sulfone, while the tunnel barrier is formed by ion beam oxidation of Nb surface. They study the effect of the fabrication conditions on the quality of narrow Nb stripes by measuring their transition temperature. Using dc transport measurements, they characterize tunnel junctions as well as single-electron transistors (SETs) and extract basic junction parameters, such as the barrier height, width, and specific capacitance. Low-frequency charge noise of all-Nb SETs at 50mK50mK has a 1∕f1∕f power spectrum and the value of ∼4×10−3e/Hz1∕2∼4×10−3e∕Hz1∕2 at 1Hz1Hz.

AB - The authors present a reliable process that allows them to fabricate all-niobium nanodevices in a reproducible and well controlled way. Deposition of niobium thin films is done through a suspended mask formed in a Ge layer supported by a thermally stable polymer called phenylene-ether-sulfone, while the tunnel barrier is formed by ion beam oxidation of Nb surface. They study the effect of the fabrication conditions on the quality of narrow Nb stripes by measuring their transition temperature. Using dc transport measurements, they characterize tunnel junctions as well as single-electron transistors (SETs) and extract basic junction parameters, such as the barrier height, width, and specific capacitance. Low-frequency charge noise of all-Nb SETs at 50mK50mK has a 1∕f1∕f power spectrum and the value of ∼4×10−3e/Hz1∕2∼4×10−3e∕Hz1∕2 at 1Hz1Hz.

U2 - 10.1116/1.2715971

DO - 10.1116/1.2715971

M3 - Journal article

VL - 25

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

SN - 1071-1023

IS - 2

M1 - 448

ER -