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Characterization of linearly graded metamorphic InGaP buffer layers on GaAs using high-resolution X-ray diffraction

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Characterization of linearly graded metamorphic InGaP buffer layers on GaAs using high-resolution X-ray diffraction. / Yuan, K.; Radhakrishnan, K.; Zheng, H. Q.; Zhuang, Qiandong; Ing, G. I.

In: Thin Solid Films, Vol. 391, No. 1, 2001, p. 36-41.

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Yuan, K. ; Radhakrishnan, K. ; Zheng, H. Q. ; Zhuang, Qiandong ; Ing, G. I. / Characterization of linearly graded metamorphic InGaP buffer layers on GaAs using high-resolution X-ray diffraction. In: Thin Solid Films. 2001 ; Vol. 391, No. 1. pp. 36-41.

Bibtex

@article{8be8ddfef9fb470a966a137f5bf0f889,
title = "Characterization of linearly graded metamorphic InGaP buffer layers on GaAs using high-resolution X-ray diffraction",
abstract = "High-resolution X-ray diffraction (HRXRD) was used to characterize linearly graded metamorphic InGaP buffer layers grown at different temperatures on GaAs substrate by solid-source molecular beam epitaxy. The sample grown at 380°C did not exhibit a Bragg diffraction peak corresponding to the top layers consisting of an InGaAs/InP single quantum-well structure, since it could not maintain a two-dimensional growth. When the samples were grown at higher temperatures (430–480°C), the top epitaxial layers were nearly fully relaxed and the strain relaxation anisotropy in two 〈110〉 directions was found to be small. It was also found that the growth temperature of the buffer layer for these samples did not influence the strain relaxation ratio. Moreover, the full width at half maximum (FWHM) values of the XRD peaks suggest that the sample grown at 480°C has better material quality.",
keywords = "Gallium arsenide; Indium phosphide; Molecular beam epitaxy (MBE); X-Ray diffraction",
author = "K. Yuan and K. Radhakrishnan and Zheng, {H. Q.} and Qiandong Zhuang and Ing, {G. I.}",
year = "2001",
doi = "10.1016/S0040-6090(01)00966-X",
language = "English",
volume = "391",
pages = "36--41",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1",

}

RIS

TY - JOUR

T1 - Characterization of linearly graded metamorphic InGaP buffer layers on GaAs using high-resolution X-ray diffraction

AU - Yuan, K.

AU - Radhakrishnan, K.

AU - Zheng, H. Q.

AU - Zhuang, Qiandong

AU - Ing, G. I.

PY - 2001

Y1 - 2001

N2 - High-resolution X-ray diffraction (HRXRD) was used to characterize linearly graded metamorphic InGaP buffer layers grown at different temperatures on GaAs substrate by solid-source molecular beam epitaxy. The sample grown at 380°C did not exhibit a Bragg diffraction peak corresponding to the top layers consisting of an InGaAs/InP single quantum-well structure, since it could not maintain a two-dimensional growth. When the samples were grown at higher temperatures (430–480°C), the top epitaxial layers were nearly fully relaxed and the strain relaxation anisotropy in two 〈110〉 directions was found to be small. It was also found that the growth temperature of the buffer layer for these samples did not influence the strain relaxation ratio. Moreover, the full width at half maximum (FWHM) values of the XRD peaks suggest that the sample grown at 480°C has better material quality.

AB - High-resolution X-ray diffraction (HRXRD) was used to characterize linearly graded metamorphic InGaP buffer layers grown at different temperatures on GaAs substrate by solid-source molecular beam epitaxy. The sample grown at 380°C did not exhibit a Bragg diffraction peak corresponding to the top layers consisting of an InGaAs/InP single quantum-well structure, since it could not maintain a two-dimensional growth. When the samples were grown at higher temperatures (430–480°C), the top epitaxial layers were nearly fully relaxed and the strain relaxation anisotropy in two 〈110〉 directions was found to be small. It was also found that the growth temperature of the buffer layer for these samples did not influence the strain relaxation ratio. Moreover, the full width at half maximum (FWHM) values of the XRD peaks suggest that the sample grown at 480°C has better material quality.

KW - Gallium arsenide; Indium phosphide; Molecular beam epitaxy (MBE); X-Ray diffraction

U2 - 10.1016/S0040-6090(01)00966-X

DO - 10.1016/S0040-6090(01)00966-X

M3 - Journal article

VL - 391

SP - 36

EP - 41

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1

ER -